Masahara, Meishoku

Cointegration of High-Performance Tied-Gate Three-Terminal FinFETs and Variable Threshold-Voltage Independent-Gate Four-Terminal FinFETs With Asymmetric Gate-Oxide Thicknesses

Liu, Y., Matsukawa, T., Endo, K., Masahara, M., O'uchi, S.-I., Ishii, K., Yamauchi, H., Tsukada, J., Ishikawa, Y., & Suzuki, E. (2007) · IEEE Electron Device Letters

Advancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices

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