Long, Shibing

Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM

Liu, Q., Sun, J., Lv, H., Long, S., Yin, K., Wan, N., Li, Y., Sun, L., & Liu, M. (2012) · Advanced Materials

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 588

Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

Zhang, Y., Mao, G.-Q., Zhao, X., Li, Y., Zhang, M., Wu, Z., Wu, W., Sun, H., Guo, Y., Wang, L., et al. (2021) · Nature Communications

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 300

$\hbox{ZrO}_{2}$-Based Memory Cell With a Self-Rectifying Effect for Crossbar WORM Memory Application

Zuo, Q., Long, S., Yang, S., Liu, Q., Shao, L., Wang, Q., Zhang, S., Li, Y., Wang, Y., & Liu, M. (2010) · IEEE Electron Device Letters

Advanced Memory and Neural ComputingSemiconductor materials and devices

Cited by 37