Moon, Kibong

Improved Synaptic Behavior Under Identical Pulses Using AlO x /HfO 2 Bilayer RRAM Array for Neuromorphic Systems

Woo, J., Moon, K., Song, J., Lee, S., Kwak, M., Park, J., & Hwang, H. (2016) · IEEE Electron Device Letters

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 512

Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications

Woo, J., Padovani, A., Moon, K., Kwak, M., Larcher, L., & Hwang, H. (2017) · IEEE Electron Device Letters

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 103

Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO 2 RRAM Synapse for Neuromorphic Systems

Woo, J., Moon, K., Song, J., Kwak, M., Park, J., & Hwang, H. (2016) · IEEE Transactions on Electron Devices

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 96

Large-scale neural networks implemented with Non-Volatile Memory as the synaptic weight element: Impact of conductance response

Sidler, S., Boybat, I., Shelby, R. M., Narayanan, P., Jang, J., Fumarola, A., Moon, K., Leblebici, Y., Hwang, H., & Burr, G. W. (2016) · 2016 46th European Solid-State Device Research Conference (ESSDERC)

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 47

Accelerating machine learning with Non-Volatile Memory: Exploring device and circuit tradeoffs

Fumarola, A., Narayanan, P., Sanches, L. L., Sidler, S., Jang, J., Moon, K., Shelby, R. M., Hwang, H., & Burr, G. W. (2016) · 2016 IEEE International Conference on Rebooting Computing (ICRC)

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 37