Woo, Jiyong

Improved Synaptic Behavior Under Identical Pulses Using AlO x /HfO 2 Bilayer RRAM Array for Neuromorphic Systems

Woo, J., Moon, K., Song, J., Lee, S., Kwak, M., Park, J., & Hwang, H. (2016) · IEEE Electron Device Letters

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 512

RRAM-based synapse for neuromorphic system with pattern recognition function

Park, S., Kim, H., Choo, M., Noh, J., Sheri, A., Jung, S., Seo, K., Park, J., Kim, S., Lee, W., et al. (2012) · 2012 International Electron Devices Meeting

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 191

Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array

Song, J., Woo, J., Prakash, A., Lee, D., & Hwang, H. (2015) · IEEE Electron Device Letters

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 169

Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications

Woo, J., Padovani, A., Moon, K., Kwak, M., Larcher, L., & Hwang, H. (2017) · IEEE Electron Device Letters

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 103

Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO 2 RRAM Synapse for Neuromorphic Systems

Woo, J., Moon, K., Song, J., Kwak, M., Park, J., & Hwang, H. (2016) · IEEE Transactions on Electron Devices

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 96