Li, Zhiyong

Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing

Wang, Z., Joshi, S., Savel’ev, S. E., Jiang, H., Midya, R., Lin, P., Hu, M., Ge, N., Strachan, J. P., Li, Z., et al. (2017) · Nature Materials

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 2,358

Analogue signal and image processing with large memristor crossbars

Li, C., Hu, M., Li, Y., Jiang, H., Ge, N., Montgomery, E., Zhang, J., Song, W., Dávila, N., Graves, C. E., et al. (2017) · Nature Electronics

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 1,292

High‐Speed and Low‐Energy Nitride Memristors

Choi, B. J., Torrezan, A. C., Strachan, J. P., Kotula, P. G., Lohn, A. J., Marinella, M. J., Li, Z., Williams, R. S., & Yang, J. J. (2016) · Advanced Functional Materials

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 356

A hybrid nanomemristor/transistor logic circuit capable of self-programming

Borghetti, J., Li, Z., Straznicky, J., Li, X., Ohlberg, D. A. A., Wu, W., Stewart, D. R., & Williams, R. S. (2009) · Proceedings of the National Academy of Sciences

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 270

Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application

Kim, K. M., Zhang, J., Graves, C., Yang, J. J., Choi, B. J., Hwang, C. S., Li, Z., & Williams, R. S. (2016) · Nano Letters

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 246

Truly Electroforming‐Free and Low‐Energy Memristors with Preconditioned Conductive Tunneling Paths

Yoon, J. H., Zhang, J., Ren, X., Wang, Z., Wu, H., Li, Z., Barnell, M., Wu, Q., Lauhon, L. J., Xia, Q., et al. (2017) · Advanced Functional Materials

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 95