Liu, Qi

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

Yang, Y. C., Pan, F., Liu, Q., Liu, M., & Zeng, F. (2009) · Nano Letters

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 876

Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM

Liu, Q., Sun, J., Lv, H., Long, S., Yin, K., Wan, N., Li, Y., Sun, L., & Liu, M. (2012) · Advanced Materials

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 588

Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imaging

Zhang, Y., Mao, G.-Q., Zhao, X., Li, Y., Zhang, M., Wu, Z., Wu, W., Sun, H., Guo, Y., Wang, L., et al. (2021) · Nature Communications

Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance Devices

Cited by 300

Emerging dynamic memristors for neuromorphic reservoir computing

Cao, J., Zhang, X., Cheng, H., Qiu, J., Liu, X., Wang, M., & Liu, Q. (2022) · Nanoscale

Advanced Memory and Neural ComputingNeural Networks and Reservoir Computing

Cited by 134

Echo state graph neural networks with analogue random resistive memory arrays

Wang, S., Li, Y., Wang, D., Zhang, W., Chen, X., Dong, D., Wang, S., Zhang, X., Lin, P., Gallicchio, C., et al. (2023) · Nature Machine Intelligence

Advanced Memory and Neural ComputingNeural Networks and Reservoir Computing

Cited by 84

High on/off ratio black phosphorus based memristor with ultra-thin phosphorus oxide layer

Wang, Y., Wu, F., Liu, X., Lin, J., Chen, J.-Y., Wu, W.-W., Wei, J., Liu, Y., Liu, Q., & Liao, L. (2019) · Applied Physics Letters

Advanced Memory and Neural Computing2D Materials and Applications

Cited by 72

Theoretical calculation of equilibrium Mg isotope fractionations between minerals and aqueous solutions

Gao, C., Cao, X., Liu, Q., Yang, Y., Zhang, S., He, Y., Tang, M., & Liu, Y. (2018) · Chemical Geology

Geological and Geochemical AnalysisCalcium Carbonate Crystallization and Inhibition

Cited by 66

$\hbox{ZrO}_{2}$-Based Memory Cell With a Self-Rectifying Effect for Crossbar WORM Memory Application

Zuo, Q., Long, S., Yang, S., Liu, Q., Shao, L., Wang, Q., Zhang, S., Li, Y., Wang, Y., & Liu, M. (2010) · IEEE Electron Device Letters

Advanced Memory and Neural ComputingSemiconductor materials and devices

Cited by 37