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Photoresponse Properties of CdSe Single‐Nanoribbon Photodetectors

Jiang, Y., Zhang, W. J., Jie, J. S., Meng, X. M., Fan, X., Lee, S.‐T.·2007·Advanced Functional Materials

Abstract

Photodetectors are fabricated from individual single‐crystal CdSe nanoribbons, and the photoresponse properties of the devices are studied systematically. The photodetector shows a high sensitivity towards excitation wavelength with a sharp cut‐off at 710 nm, corresponding to the bandgap of CdSe. The device exhibits a high photo‐to‐dark current ratio of five orders of magnitude at 650 nm, and can function with excellent stability, reproducibility, and high response speed (< 1 ms) in a wide range of switching frequency (up to 300 Hz). The photocurrent of the device shows a power‐law dependence on light intensity. This finding together with the analysis of the light intensity‐dependent response speed reveals the existence of various traps at different energy levels (shallow and deep) in the bandgap. Coating with a thin SiO 2 isolating layer increases the photocurrent but decreases the response speed of the CdSe nanoribbon, which is attributed to reduction of recombination centers on ribbon surface.

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Metadata

Authors
Jiang, Y., Zhang, W. J., Jie, J. S., Meng, X. M., Fan, X., & Lee, S. ‐.
Venue
Advanced Functional Materials
Publisher
Wiley
Published
2007-06-29
Volume
17
Issue
11
Pages
1795-1800
ISSN
  • 1616-301X (ISSN-L)
  • 1616-3028
OpenAlex
W1988108791
Cited by
280
References
1
FWCI
5.30
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Photoresponse Properties of CdSe Single‐Nanoribbon Photodetectors. https://app.cochat.ai/papers/10.1002/adfm.200600351
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Jiang, Y., Zhang, W. J., Jie, J. S., Meng, X. M., Fan, X., & Lee, S. ‐. (2007). Photoresponse Properties of CdSe Single‐Nanoribbon Photodetectors. Advanced Functional Materials. https://doi.org/10.1002/adfm.200600351

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