The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
Direct Observation of Ag Filamentary Paths in Organic Resistive Memory Devices
Abstract
We demonstrate bipolar switching of organic resistive memory devices consisting of Ag/polymer/heavily‐doped p‐type poly Si junctions in an 8 × 8 cross‐bar array structure. The bistable switching mechanism appears to be related to the formation and rupture of highly conductive paths, as shown by a direct observation of Ag metallic bridges using transmission electron microscopy and energy‐dispersive X‐ray spectroscopy. Current images of high‐ and low‐conducting states acquired by conducting atomic force microscopy also support this filamentary switching mechanism. The filamentary formation can be described by an electrochemical redox reaction model of Ag. Our results may also be applied to other kinds of organic materials presenting similar switching properties, contributing to the optimization of device scaling or memory performance improvement.
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Citations
Cites
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Yang, Y. C., Pan, F., Liu, Q., Liu, M., & Zeng, F. (2009) · Nano Letters · doi:10.1021/nl900006g · Cited by 876
A model for filament growth and switching in amorphous oxide films
Dearnaley, G., Morgan, D. V., & Stoneham, A. M. (1970) · Journal of Non-Crystalline Solids · doi:10.1016/0022-3093(70)90097-9 · Cited by 289
Understanding the switching-off mechanism in Ag+ migration based resistively switching model systems
Guo, X., Schindler, C., Menzel, S., & Waser, R. (2007) · Applied Physics Letters · doi:10.1063/1.2793686 · Cited by 248
Cited by
Liu, Q., Sun, J., Lv, H., Long, S., Yin, K., Wan, N., Li, Y., Sun, L., & Liu, M. (2012) · Advanced Materials · doi:10.1002/adma.201104104 · Cited by 588
Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
Chen, J.-Y., Hsin, C.-L., Huang, C.-W., Chiu, C.-H., Huang, Y.-T., Lin, S.-J., Wu, W.-W., & Chen, L.-J. (2013) · Nano Letters · doi:10.1021/nl4015638 · Cited by 388
Metadata
- Authors
- Cho, B., Yun, J., Song, S., Ji, Y., Kim, D., & Lee, T.
- Venue
- Advanced Functional Materials
- Publisher
- Wiley
- Published
- 2011-08-24
- Volume
- 21
- Issue
- 20
- Pages
- 3976-3981
- ISSN
- 1616-301X (ISSN-L)
- 1616-3028
- OpenAlex
- W1997541220
- Cited by
- 164
- References
- 4
- FWCI
- 9.58
- Type
- journal article
- Language
- en
- Open access
- closed
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- Cho, B., Yun, J., Song, S., Ji, Y., Kim, D., & Lee, T. (2011). Direct Observation of Ag Filamentary Paths in Organic Resistive Memory Devices. Advanced Functional Materials. https://doi.org/10.1002/adfm.201101210
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Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
