The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Novel and Enhanced Optoelectronic Performances of Multilayer MoS2–WS2 Heterostructure Transistors
Abstract
Van der Waals heterostructures designed by assembling isolated two‐dimensional (2D) crystals have emerged as a new class of artificial materials with interesting and unusual physical properties. Here, the multilayer MoS 2–WS 2 heterostructures with different configurations are reported and their optoelectronic properties are studied. It is shown that the new heterostructured material possesses new functionalities and superior electrical and optoelectronic properties that far exceed the one for their constituents, MoS 2 or WS 2. The vertical transistor exhibits a novel rectifying and bipolar behavior, and can also act as photovoltaic cell and self‐driven photodetector with photo‐switching ratio exceeding 10 3. The planar device also exhibits high field‐effect ON/OFF ratio (>10 5), high electron mobility of 65 cm 2/Vs, and high photoresponsivity of 1.42 A/W compared to that in isolated multilayer MoS 2 or WS 2 nanoflake transistors. The results suggest that formation of MoS 2–WS 2 heterostructures could significantly enhance the performance of optoelectronic devices, thus open up possibilities for future nanoelectronic, photovoltaic, and optoelectronic applications.
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Cites
Graphene: Status and Prospects
Geim, A. K. (2009) · Science · doi:10.1126/science.1158877 · Cited by 13,942
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
Roy, K., Padmanabhan, M., Goswami, S., Sai, T. P., Ramalingam, G., Raghavan, S., & Ghosh, A. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.206 · Cited by 1,436
Cited by
Photocurrent generation with two-dimensional van der Waals semiconductors
Buscema, M., Island, J. O., Groenendijk, D. J., Blanter, S. I., Steele, G. A., van der Zant, H. S. J., & Castellanos-Gomez, A. (2015) · Chemical Society Reviews · doi:10.1039/c5cs00106d · Cited by 1,051
Zeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 574
Self‐Powered Photodetectors Based on 2D Materials
Qiao, H., Huang, Z., Ren, X., Liu, S., Zhang, Y., Qi, X., & Zhang, H. (2020) · Advanced Optical Materials · doi:10.1002/adom.201900765 · Cited by 435
Yao, J. D., Zheng, Z. Q., Shao, J. M., & Yang, G. W. (2015) · Nanoscale · doi:10.1039/c5nr03361f · Cited by 324
Atomically thin p–n junctions based on two-dimensional materials
Frisenda, R., Molina-Mendoza, A. J., Mueller, T., Castellanos-Gomez, A., & van der Zant, H. S. J. (2018) · Chemical Society Reviews · doi:10.1039/c7cs00880e · Cited by 312
Metadata
- Authors
- Huo, N., Kang, J., Wei, Z., Li, S., Li, J., & Wei, S.
- Venue
- Advanced Functional Materials
- Publisher
- Wiley
- Published
- 2014-09-05
- Volume
- 24
- Issue
- 44
- Pages
- 7025-7031
- ISSN
- 1616-301X (ISSN-L)
- 1616-3028
- OpenAlex
- W2006568740
- Cited by
- 453
- References
- 3
- FWCI
- 16.98
- Type
- journal article
- Language
- en
- Open access
- closed
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