The DOI matches its Crossref record; 8 of the 8 references it cites were found in a registry or an index.
MoS2/Si Heterojunction with Vertically Standing Layered Structure for Ultrafast, High‐Detectivity, Self‐Driven Visible–Near Infrared Photodetectors
Abstract
As an interesting layered material, molybdenum disulfide (MoS 2) has been extensively studied in recent years due to its exciting properties. However, the applications of MoS 2 in optoelectronic devices are impeded by the lack of high‐quality p–n junction, low light absorption for mono‐/multilayers, and the difficulty for large‐scale monolayer growth. Here, it is demonstrated that MoS 2 films with vertically standing layered structure can be deposited on silicon substrate with a scalable sputtering method, forming the heterojunction‐type photodetectors. Molecular layers of the MoS 2 films are perpendicular to the substrate, offering high‐speed paths for the separation and transportation of photo‐generated carriers. Owing to the strong light absorption of the relatively thick MoS 2 film and the unique vertically standing layered structure, MoS 2/Si heterojunction photodetectors with unprecedented performance are actualized. The self‐driven MoS 2/Si heterojunction photodetector is sensitive to a broadband wavelength from visible light to near‐infrared light, showing an extremely high detectivity up to ≈10 13 Jones (Jones = cm Hz 1/2 W−1), and an ultrafast response speed of ≈3 μs. The performance is significantly better than the photodetectors based on mono‐/multilayer MoS 2 nanosheets. Additionally, the MoS 2/Si photodetectors exhibit excellent stability in air for a month. This work unveils the great potential of MoS 2/Si heterojunction for optoelectronic applications.
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Cites
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
The electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Kibsgaard, J., Chen, Z., Reinecke, B. N., & Jaramillo, T. F. (2012) · Nature Materials · doi:10.1038/nmat3439 · Cited by 3,234
Graphene photodetectors for high-speed optical communications
Mueller, T., Xia, F., & Avouris, P. (2010) · Nature Photonics · doi:10.1038/nphoton.2010.40 · Cited by 2,474
High-responsivity graphene/silicon-heterostructure waveguide photodetectors
Wang, X., Cheng, Z., Xu, K., Tsang, H. K., & Xu, J.-B. (2013) · Nature Photonics · doi:10.1038/nphoton.2013.241 · Cited by 873
Controlled Synthesis of Highly Crystalline MoS 2 Flakes by Chemical Vapor Deposition
Wang, X., Feng, H., Wu, Y., & Jiao, L. (2013) · Journal of the American Chemical Society · doi:10.1021/ja4013485 · Cited by 748
Karataş, Ş., Altındal, Ş., Türüt, A., & Özmen, A. (2003) · Applied Surface Science · doi:10.1016/s0169-4332(03)00564-6 · Cited by 258
Cited by
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Wu, D., Guo, C., Zeng, L., Ren, X., Shi, Z., Wen, L., Chen, Q., Zhang, M., Li, X. J., Shan, C.-X., et al. (2023) · Light: Science & Applications · doi:10.1038/s41377-022-01047-5 · Cited by 404
Self-citationLiu, Y., Zhang, Y., Zhao, K., Yang, Z., Feng, J., Zhang, X., Wang, K., Meng, L., Ye, H., Liu, M., et al. (2018) · Advanced Materials · doi:10.1002/adma.201707314 · Cited by 354
Self-citationAtomically thin p–n junctions based on two-dimensional materials
Frisenda, R., Molina-Mendoza, A. J., Mueller, T., Castellanos-Gomez, A., & van der Zant, H. S. J. (2018) · Chemical Society Reviews · doi:10.1039/c7cs00880e · Cited by 312
Yuan, J., Sun, T., Hu, Z., Yu, W., Ma, W., Zhang, K., Sun, B., Lau, S. P., Bao, Q., Lin, S., et al. (2018) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.8b13620 · Cited by 152
Metadata
- Authors
- Wang, L., Jie, J., Shao, Z., Zhang, Q., Zhang, X., Wang, Y., Sun, Z., & Lee, S.
- Venue
- Advanced Functional Materials
- Publisher
- Wiley
- Published
- 2015-03-30
- Volume
- 25
- Issue
- 19
- Pages
- 2910-2919
- ISSN
- 1616-301X (ISSN-L)
- 1616-3028
- OpenAlex
- W2030927935
- Cited by
- 684
- References
- 8
- FWCI
- 21.85
- Type
- journal article
- Language
- en
- Open access
- closed
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- The paper
- Wang, L., Jie, J., Shao, Z., Zhang, Q., Zhang, X., Wang, Y., Sun, Z., & Lee, S. (2015). MoS2/Si Heterojunction with Vertically Standing Layered Structure for Ultrafast, High‐Detectivity, Self‐Driven Visible–Near Infrared Photodetectors. Advanced Functional Materials. https://doi.org/10.1002/adfm.201500216
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