The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
ReS2‐Based Field‐Effect Transistors and Photodetectors
Abstract
Atomically thin 2D layered transition metal dichalcogenides (TMDs) have been extensively studied in recent years because of their appealing electrical and optical properties. Here, the fabrication of ReS 2 field‐effect transistors is reported via the encapsulation of ReS 2 nanosheets in a high‐κ Al 2 O 3 dielectric environment. Low‐temperature transport measurements allow to observe a direct metal‐to‐insulator transition originating from strong electron–electron interactions. Remarkably, the photodetectors based on ReS 2 exhibit gate‐tunable photoresponsivity up to 16.14 A W−1 and external quantum efficiency reaching 3168%, showing a competitive device performance to those reported in graphene, MoSe 2, GaS, and GaSe‐based photodetectors. This study unambiguously distinguishes ReS 2 as a new candidate for future applications in electronics and optoelectronics.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Graphene photodetectors for high-speed optical communications
Mueller, T., Xia, F., & Avouris, P. (2010) · Nature Photonics · doi:10.1038/nphoton.2010.40 · Cited by 2,474
Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
Roy, K., Padmanabhan, M., Goswami, S., Sai, T. P., Ramalingam, G., Raghavan, S., & Ghosh, A. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.206 · Cited by 1,436
Cited by
Tunable Ambipolar Polarization-Sensitive Photodetectors Based on High-Anisotropy ReSe2 Nanosheets
Zhang, E., Wang, P., Li, Z., Wang, H., Song, C., Huang, C., Chen, Z.-G., Yang, L., Zhang, K., Lu, S., et al. (2016) · ACS Nano · doi:10.1021/acsnano.6b04165 · Cited by 384
Self-citationHafeez, M., Gan, L., Li, H., Ma, Y., & Zhai, T. (2016) · Advanced Materials · doi:10.1002/adma.201601977 · Cited by 256
Metadata
- Authors
- Zhang, E., Jin, Y., Yuan, X., Wang, W., Zhang, C., Tang, L., Liu, S., Zhou, P., Hu, W., & Xiu, F.
- Venue
- Advanced Functional Materials
- Publisher
- Wiley
- Published
- 2015-05-22
- Volume
- 25
- Issue
- 26
- Pages
- 4076-4082
- ISSN
- 1616-301X (ISSN-L)
- 1616-3028
- OpenAlex
- W1890982838
- Cited by
- 353
- References
- 3
- FWCI
- 17.19
- Type
- journal article
- Language
- en
- Open access
- closed
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- Zhang, E., Jin, Y., Yuan, X., Wang, W., Zhang, C., Tang, L., Liu, S., Zhou, P., Hu, W., & Xiu, F. (2015). ReS2‐Based Field‐Effect Transistors and Photodetectors. Advanced Functional Materials. https://doi.org/10.1002/adfm.201500969
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