The DOI matches its Crossref record; 30 of the 30 references it cites were found in a registry or an index.
High‐Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self‐Assembled Monolayer Doping
Abstract
Most doping research into transition metal dichalcogenides (TMDs) has been mainly focused on the improvement of electronic device performance. Here, the effect of self‐assembled monolayer (SAM)‐based doping on the performance of WSe 2‐ and MoS 2‐based transistors and photodetectors is investigated. The achieved doping concentrations are ≈1.4 × 10 11 for octadecyltrichlorosilane (OTS) p‐doping and ≈10 11 for aminopropyltriethoxysilane (APTES) n‐doping (nondegenerate). Using this SAM doping technique, the field‐effect mobility is increased from 32.58 to 168.9 cm 2 V−1 s in OTS/WSe 2 transistors and from 28.75 to 142.2 cm 2 V−1 s in APTES/MoS 2 transistors. For the photodetectors, the responsivity is improved by a factor of ≈28.2 (from 517.2 to 1.45 × 10 4 A W−1) in the OTS/WSe 2 devices and by a factor of ≈26.4 (from 219 to 5.75 × 10 3 A W−1) in the APTES/MoS 2 devices. The enhanced photoresponsivity values are much higher than that of the previously reported TMD photodetectors. The detectivity enhancement is ≈26.6‐fold in the OTS/WSe 2 devices and ≈24.5‐fold in the APTES/MoS 2 devices and is caused by the increased photocurrent and maintained dark current after doping. The optoelectronic performance is also investigated with different optical powers and the air‐exposure times. This doping study performed on TMD devices will play a significant role for optimizing the performance of future TMD‐based electronic/optoelectronic applications.
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Cites
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Emerging Photoluminescence in Monolayer MoS2
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Ultrasensitive photodetectors based on monolayer MoS2
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Tightly bound trions in monolayer MoS2
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Integrated Circuits Based on Bilayer MoS2 Transistors
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Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions
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Self-citationOptical generation of excitonic valley coherence in monolayer WSe2
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Self-citationGraphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
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Cited by
Recent Advances in Optoelectronic Devices Based on 2D Materials and Their Heterostructures
Cheng, J., Wang, C., Zou, X., & Liao, L. (2019) · Advanced Optical Materials · doi:10.1002/adom.201800441 · Cited by 359
Wang, J., Fang, H., Wang, X., Chen, X., Lu, W., & Hu, W. (2017) · Small · doi:10.1002/smll.201700894 · Cited by 339
Doping engineering and functionalization of two-dimensional metal chalcogenides
Luo, P., Zhuge, F., Zhang, Q., Chen, Y., Lv, L., Huang, Y., Li, H., & Zhai, T. (2019) · Nanoscale Horizons · doi:10.1039/c8nh00150b · Cited by 339
Gobbi, M., Orgiu, E., & Samorì, P. (2018) · Advanced Materials · doi:10.1002/adma.201706103 · Cited by 267
Metadata
- Authors
- Kang, D., Kim, M., Shim, J., Jeon, J., Park, H., Jung, W., Yu, H., Pang, C., Lee, S., & Park, J.
- Venue
- Advanced Functional Materials
- Publisher
- Wiley
- Published
- 2015-05-26
- Volume
- 25
- Issue
- 27
- Pages
- 4219-4227
- ISSN
- 1616-301X (ISSN-L)
- 1616-3028
- OpenAlex
- W1506408666
- Cited by
- 302
- References
- 30
- FWCI
- 10.66
- Type
- journal article
- Language
- en
- Open access
- closed
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- Kang, D., Kim, M., Shim, J., Jeon, J., Park, H., Jung, W., Yu, H., Pang, C., Lee, S., & Park, J. (2015). High‐Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self‐Assembled Monolayer Doping. Advanced Functional Materials. https://doi.org/10.1002/adfm.201501170
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