The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
High Responsivity Phototransistors Based on Few‐Layer ReS2 for Weak Signal Detection
Open accessAbstract
2D transition metal dichalcogenides are emerging with tremendous potential in many optoelectronic applications due to their strong light–matter interactions. To fully explore their potential in photoconductive detectors, high responsivity is required. Here, high responsivity phototransistors based on few‐layer rhenium disulfide (ReS 2) are presented. Depending on the back gate voltage, source drain bias and incident optical light intensity, the maximum attainable photoresponsivity can reach as high as 88 600 A W−1, which is a record value compared to other individual 2D materials with similar device structures and two orders of magnitude higher than that of monolayer MoS 2. Such high photoresponsivity is attributed to the increased light absorption as well as the gain enhancement due to the existence of trap states in the few‐layer ReS 2 flakes. It further enables the detection of weak signals, as successfully demonstrated with weak light sources including a lighter and limited fluorescent lighting. Our studies underscore ReS 2 as a promising material for future sensitive optoelectronic applications.
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Photodetectors based on graphene, other two-dimensional materials and hybrid systems
Koppens, F. H. L., Mueller, T., Avouris, P., Ferrari, A. C., Vitiello, M. S., & Polini, M. (2014) · Nature Nanotechnology · doi:10.1038/nnano.2014.215 · Cited by 3,828
Graphene photodetectors for high-speed optical communications
Mueller, T., Xia, F., & Avouris, P. (2010) · Nature Photonics · doi:10.1038/nphoton.2010.40 · Cited by 2,474
Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
Roy, K., Padmanabhan, M., Goswami, S., Sai, T. P., Ramalingam, G., Raghavan, S., & Ghosh, A. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.206 · Cited by 1,436
Cited by
Progress, Challenges, and Opportunities for 2D Material Based Photodetectors
Long, M., Wang, P., Fang, H., & Hu, W. (2019) · Advanced Functional Materials · doi:10.1002/adfm.201803807 · Cited by 1,598
Self-citationPhotogating in Low Dimensional Photodetectors
Fang, H., & Hu, W. (2017) · Advanced Science · doi:10.1002/advs.201700323 · Cited by 986
Self-citationAnalyzing the Carrier Mobility in Transition‐Metal Dichalcogenide MoS2 Field‐Effect Transistors
Yu, Z., Ong, Z., Li, S., Xu, J., Zhang, G., Zhang, Y., Shi, Y., & Wang, X. (2017) · Advanced Functional Materials · doi:10.1002/adfm.201604093 · Cited by 426
Self-citationBroadband Photovoltaic Detectors Based on an Atomically Thin Heterostructure
Long, M., Liu, E., Wang, P., Gao, A., Xia, H., Luo, W., Wang, B., Zeng, J., Fu, Y., Xu, K., et al. (2016) · Nano Letters · doi:10.1021/acs.nanolett.5b04538 · Cited by 408
Self-citationWang, J., Fang, H., Wang, X., Chen, X., Lu, W., & Hu, W. (2017) · Small · doi:10.1002/smll.201700894 · Cited by 339
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Metadata
- Authors
- Liu, E., Long, M., Zeng, J., Luo, W., Wang, Y., Pan, Y., Zhou, W., Wang, B., Hu, W., Ni, Z., You, Y., Zhang, X., Qin, S., Shi, Y., Watanabe, K., Taniguchi, T., Yuan, H., Hwang, H. Y., Cui, Y., Miao, F., & Xing, D.
- Venue
- Advanced Functional Materials
- Publisher
- Wiley
- Published
- 2016-02-05
- Volume
- 26
- Issue
- 12
- Pages
- 1938-1944
- ISSN
- 1616-301X (ISSN-L)
- 1616-3028
- OpenAlex
- W2276655771
- Cited by
- 322
- References
- 3
- FWCI
- 19.50
- Type
- journal article
- Language
- en
- Open access
- green
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- Liu, E., Long, M., Zeng, J., Luo, W., Wang, Y., Pan, Y., Zhou, W., Wang, B., Hu, W., Ni, Z., You, Y., Zhang, X., Qin, S., Shi, Y., Watanabe, K., Taniguchi, T., Yuan, H., Hwang, H. Y., Cui, Y., . . . Xing, D. (2016). High Responsivity Phototransistors Based on Few‐Layer ReS2 for Weak Signal Detection. Advanced Functional Materials. https://doi.org/10.1002/adfm.201504408
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