Large‐Area Bilayer ReS2 Film/Multilayer ReS2 Flakes Synthesized by Chemical Vapor Deposition for High Performance Photodetectors

Abstract

Rhenium disulfide (ReS 2) is attracting more and more attention for its thickness‐depended direct band gap. As a new appearing 2D transition metal dichalcogenide, the studies on synthesis method via chemical vapor deposition (CVD) is still rare. Here a systematically study on the CVD growth of continuous bilayer ReS 2 film and single crystalline hexagonal ReS 2 flake, as well as their corresponding optoelectronic properties is reported. Moreover, the growth mechanism has been proposed, accompanied with simulation study. High‐performance photodetector based on ReS 2 flake shows a high responsivity of 604 A·W−1, high external quantum efficiency of 1.50 × 10 5 %, and fast response time of 2 ms. ReS 2 film‐based photodetector exhibits weaker performance than the flake one; however, it still demonstrates a much faster response time (≈10 3 ms) than other reported CVD‐grown ReS 2‐based photodetector (≈10 4–10 5 ms). Such good properties of ReS 2 render it a promising future in 2D optoelectronics.