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Diameter‐Controlled Growth of Single‐Crystalline In2O3 Nanowires and Their Electronic Properties

Li, C., Zhang, D., Han, S., Liu, X., Tang, T., Zhou, C.·2003·Advanced Materials

Abstract

Single‐crystalline In 2 O 3 nanowires have been synthesized using a laser ablation approach. Precise control over the nanowire diameter was achieved by using monodispersed gold clusters as the catalyst. Extensive material characterization has been carried out to determine the lattice structure (see Figure) and dimensions of these nanowires. Individual In 2 O 3 nanowires have been utilized to construct field‐effect transistors with on/off ratios up to 1000.

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Metadata

Authors
Li, C., Zhang, D., Han, S., Liu, X., Tang, T., & Zhou, C.
Venue
Advanced Materials
Publisher
Wiley
Published
2003-01-16
Volume
15
Issue
2
Pages
143-146
ISSN
  • 0935-9648 (ISSN-L)
  • 1521-4095
OpenAlex
W2078809425
Cited by
374
References
0
FWCI
23.83
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Diameter‐Controlled Growth of Single‐Crystalline In2O3 Nanowires and Their Electronic Properties. https://app.cochat.ai/papers/10.1002/adma.200390029
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Li, C., Zhang, D., Han, S., Liu, X., Tang, T., & Zhou, C. (2003). Diameter‐Controlled Growth of Single‐Crystalline In2O3 Nanowires and Their Electronic Properties. Advanced Materials. https://doi.org/10.1002/adma.200390029

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Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.