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Gate Dielectrics for Organic Field‐Effect Transistors: New Opportunities for Organic Electronics
Abstract
In this contribution we review the motivations for, and recent advances in, new gate dielectric materials for incorporation into organic thin‐film transistors (OTFTs) for organic electronics. After a general introduction to OTFT materials, operating principles, and processing requirements for optimizing low‐cost organic electronics, this review focuses on three classes of OTFT‐compatible dielectrics: i) inorganic (high‐k) materials; ii) polymeric materials; and iii) self‐assembled mono‐ and/multilayer materials. The principal goals in this active research area are tunable and reduced OTFT operating voltages, leading to decreased device power consumption while providing excellent dielectric/insulator properties and efficient low‐cost solution‐phase processing characteristics.
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Cited by
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Facchetti, A. (2007) · Materials Today · doi:10.1016/s1369-7021(07)70017-2 · Cited by 874
Self-citationStretchable Self-Healing Polymeric Dielectrics Cross-Linked Through Metal–Ligand Coordination
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Metadata
- Authors
- Facchetti, A., Yoon, M. ‐., & Marks, T. J.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2005-07-08
- Volume
- 17
- Issue
- 14
- Pages
- 1705-1725
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2047665681
- Cited by
- 1,032
- References
- 0
- FWCI
- 61.02
- Type
- journal article
- Language
- en
- Open access
- closed
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- Facchetti, A., Yoon, M. ‐., & Marks, T. J. (2005). Gate Dielectrics for Organic Field‐Effect Transistors: New Opportunities for Organic Electronics. Advanced Materials. https://doi.org/10.1002/adma.200500517
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