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Gate Dielectrics for Organic Field‐Effect Transistors: New Opportunities for Organic Electronics

Facchetti, A., Yoon, M.‐H., Marks, T. J.·2005·Advanced Materials

Abstract

In this contribution we review the motivations for, and recent advances in, new gate dielectric materials for incorporation into organic thin‐film transistors (OTFTs) for organic electronics. After a general introduction to OTFT materials, operating principles, and processing requirements for optimizing low‐cost organic electronics, this review focuses on three classes of OTFT‐compatible dielectrics: i) inorganic (high‐k) materials; ii) polymeric materials; and iii) self‐assembled mono‐ and/multilayer materials. The principal goals in this active research area are tunable and reduced OTFT operating voltages, leading to decreased device power consumption while providing excellent dielectric/insulator properties and efficient low‐cost solution‐phase processing characteristics.

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Metadata

Authors
Facchetti, A., Yoon, M. ‐., & Marks, T. J.
Venue
Advanced Materials
Publisher
Wiley
Published
2005-07-08
Volume
17
Issue
14
Pages
1705-1725
ISSN
  • 0935-9648 (ISSN-L)
  • 1521-4095
OpenAlex
W2047665681
Cited by
1,032
References
0
FWCI
61.02
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Gate Dielectrics for Organic Field‐Effect Transistors: New Opportunities for Organic Electronics. https://app.cochat.ai/papers/10.1002/adma.200500517
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Facchetti, A., Yoon, M. ‐., & Marks, T. J. (2005). Gate Dielectrics for Organic Field‐Effect Transistors: New Opportunities for Organic Electronics. Advanced Materials. https://doi.org/10.1002/adma.200500517

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.