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Cited by 248

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Low‐Voltage Polymer Field‐Effect Transistors Gated via a Proton Conductor

Herlogsson, L., Crispin, X., Robinson, N. D., Sandberg, M., Hagel, O.‐J., Gustafsson, G., Berggren, M.·2007·Advanced Materials

Abstract

Low operating voltages for p-channel organic field-effect transistors (OFETs) can be achieved by using an electrolyte as the gate insulator. However, mobile anions in the electrolyte can lead to undesired electrochemistry in the channel. In order to avoid this, a polyanionic electrolyte is used as the gate insulator. The resulting OFET has operating voltages of less than 1 V (see figure) and shows fast switching (less than 0.3 ms) in ambient atmosphere.

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Metadata

Authors
Herlogsson, L., Crispin, X., Robinson, N. D., Sandberg, M., Hagel, O. ‐., Gustafsson, G., & Berggren, M.
Venue
Advanced Materials
Publisher
Wiley
Published
2007-01-04
Volume
19
Issue
1
Pages
97-101
ISSN
  • 0935-9648 (ISSN-L)
  • 1521-4095
OpenAlex
W1991259161
Cited by
248
References
1
FWCI
17.01
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Low‐Voltage Polymer Field‐Effect Transistors Gated via a Proton Conductor. https://app.cochat.ai/papers/10.1002/adma.200600871
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Herlogsson, L., Crispin, X., Robinson, N. D., Sandberg, M., Hagel, O. ‐., Gustafsson, G., & Berggren, M. (2007). Low‐Voltage Polymer Field‐Effect Transistors Gated via a Proton Conductor. Advanced Materials. https://doi.org/10.1002/adma.200600871

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