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Cited by 433

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High‐Mobility Ambipolar Near‐Infrared Light‐Emitting Polymer Field‐Effect Transistors

Bürgi, Lukas, Turbiez, Mathieu, Pfeiffer, Reto, Bienewald, Frank, Kirner, Hans‐Jörg, Winnewisser, Carsten·2008·Advanced Materials

Abstract

A polymer semiconductor with ambipolar charge transport properties, BBTDPP1, is presented. Solution-processed ambipolar field-effect transistors based on this material exhibit hole and electron mobilities of 0.1 cm2 V−1 s−1 and up to 0.09 cm2 V−1 s−1, respectively. Near-infrared light emission from top-gate as well as bottom-gate ambipolar field-effect transistors based on BBTDPP1 is also reported.

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Metadata

Authors
Bürgi, L., Turbiez, M., Pfeiffer, R., Bienewald, F., Kirner, H., & Winnewisser, C.
Venue
Advanced Materials
Publisher
Wiley
Published
2008-06-04
Volume
20
Issue
11
Pages
2217-2224
ISSN
  • 0935-9648 (ISSN-L)
  • 1521-4095
OpenAlex
W2066260730
Cited by
433
References
0
FWCI
31.98
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: High‐Mobility Ambipolar Near‐Infrared Light‐Emitting Polymer Field‐Effect Transistors. https://app.cochat.ai/papers/10.1002/adma.200702775
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Bürgi, L., Turbiez, M., Pfeiffer, R., Bienewald, F., Kirner, H., & Winnewisser, C. (2008). High‐Mobility Ambipolar Near‐Infrared Light‐Emitting Polymer Field‐Effect Transistors. Advanced Materials. https://doi.org/10.1002/adma.200702775

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.