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Dense Self‐Assembly on Sparse Chemical Patterns: Rectifying and Multiplying Lithographic Patterns Using Block Copolymers
Abstract
A lithography-friendly self-assembly process which multiplies and rectifies an existing resist patterns is demonstrated here. A polymer film (right figure) has assembled at a 14 nm half-pitch on a thin resist pattern at twice the period (left figure). This directed self-assembly process dramatically heals defects and reduces feature size variation of the ill-defined resist patterns.
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Cited by
Block copolymer based nanostructures: Materials, processes, and applications to electronics
Kim, H.-C., Park, S.-M., & Hinsberg, W. D. (2010) · Chemical Reviews · doi:10.1021/cr900159v · Cited by 1,017
Self-citationBit-Patterned Magnetic Recording: Theory, Media Fabrication, and Recording Performance
Albrecht, T. R., Arora, H., Ayanoor-Vitikkate, V., Beaujour, J.-M., Bedau, D., Berman, D., Bogdanov, A. L., Chapuis, Y.-A., Cushen, J., Dobisz, E. E., et al. (2015) · IEEE Transactions on Magnetics · doi:10.1109/tmag.2015.2397880 · Cited by 398
Directed self-assembly of block copolymers for use in bit patterned media fabrication
Griffiths, R. A., Williams, A., Oakland, C., Roberts, J., Vijayaraghavan, A., & Thomson, T. (2013) · Journal of Physics D: Applied Physics · doi:10.1088/0022-3727/46/50/503001 · Cited by 375
Metadata
- Authors
- Cheng, J. Y., Rettner, C. T., Sanders, D. P., Kim, H., & Hinsberg, W. D.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2008-08-14
- Volume
- 20
- Issue
- 16
- Pages
- 3155-3158
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2074791001
- Cited by
- 312
- References
- 0
- FWCI
- 15.16
- Type
- journal article
- Language
- en
- Open access
- closed
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- Cheng, J. Y., Rettner, C. T., Sanders, D. P., Kim, H., & Hinsberg, W. D. (2008). Dense Self‐Assembly on Sparse Chemical Patterns: Rectifying and Multiplying Lithographic Patterns Using Block Copolymers. Advanced Materials. https://doi.org/10.1002/adma.200800826
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