The DOI matches its Crossref record; 8 of the 8 references it cites were found in a registry or an index.
In Situ Observation of Voltage‐Induced Multilevel Resistive Switching in Solid Electrolyte Memory
Abstract
Solid electrolyte memories utilizing voltage-induced resistance change display the capability of multilevel switching, but understanding of the microscopic switching mechanism has been left incomplete. Here, in situ TEM observation of voltage-induced changes in the microstructure of a solid electrolyte memory is reported, revealing that the multilevel switching originates from the growth of multiple conducting filaments with nanometer-sized diameter and spacing.
Overview
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Integrity signals
Registry
Cites
Statistics
Verification
Claims the paper makes
The claims and statistics of this paper haven’t been checked yet.
Run the check — free, no account needed. It reads the open-access text and checks the sources it cites.
Self-check
Percentages, sums and reported differences re-computed from the paper’s own numbers.
The self-check needs the paper’s full text.
Citations
Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges
Waser, R., Dittmann, R., Staikov, G., & Szot, K. (2009) · Advanced Materials · doi:10.1002/adma.200900375 · Cited by 5,080
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Jo, S. H., Chang, T., Ebong, I., Bhadviya, B. B., Mazumder, P., & Lu, W. (2010) · Nano Letters · doi:10.1021/nl904092h · Cited by 4,174
Memristive switching mechanism for metal/oxide/metal nanodevices
Yang, J. J., Pickett, M. D., Li, X., Ohlberg, D. A. A., Stewart, D. R., & Williams, R. S. (2008) · Nature Nanotechnology · doi:10.1038/nnano.2008.160 · Cited by 2,987
Self-citationAtomic structure of conducting nanofilaments in TiO2 resistive switching memory
Kwon, D.-H., Kim, K. M., Jang, J. H., Jeon, J. M., Lee, M. H., Kim, G. H., Li, X.-S., Park, G.-S., Lee, B., Han, S., et al. (2010) · Nature Nanotechnology · doi:10.1038/nnano.2009.456 · Cited by 2,092
Self-citationYang, Y. C., Pan, F., Liu, Q., Liu, M., & Zeng, F. (2009) · Nano Letters · doi:10.1021/nl900006g · Cited by 876
Nanoscale Memory Elements Based on Solid-State Electrolytes
Kozicki, M. N., Park, M., & Mitkova, M. (2005) · IEEE Transactions On Nanotechnology · doi:10.1109/tnano.2005.846936 · Cited by 540
Cited by
A comprehensive review on emerging artificial neuromorphic devices
Zhu, J., Zhang, T., Yang, Y., & Huang, R. (2020) · Applied Physics Reviews · doi:10.1063/1.5118217 · Cited by 758
Electrochemical dynamics of nanoscale metallic inclusions in dielectrics
Yang, Y., Gao, P., Li, L., Pan, X., Tappertzhofen, S., Choi, S., Waser, R., Valov, I., & Lu, W. D. (2014) · Nature Communications · doi:10.1038/ncomms5232 · Cited by 667
Self-citationLiu, Q., Sun, J., Lv, H., Long, S., Yin, K., Wan, N., Li, Y., Sun, L., & Liu, M. (2012) · Advanced Materials · doi:10.1002/adma.201104104 · Cited by 588
The Future of Memristors: Materials Engineering and Neural Networks
Sun, K., Chen, J., & Yan, X. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202006773 · Cited by 482
Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
Chen, J.-Y., Hsin, C.-L., Huang, C.-W., Chiu, C.-H., Huang, Y.-T., Lin, S.-J., Wu, W.-W., & Chen, L.-J. (2013) · Nano Letters · doi:10.1021/nl4015638 · Cited by 388
Metadata
- Authors
- Choi, S., Park, G., Kim, K., Cho, S., Yang, W., Li, X., Moon, J., Lee, K., & Kim, K.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2011-06-14
- Volume
- 23
- Issue
- 29
- Pages
- 3272-3277
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2080538149
- Cited by
- 188
- References
- 8
- FWCI
- 9.58
- Type
- journal article
- Language
- en
- Open access
- closed
About these checks
Registry, retraction, Cites and statistics results are computed, not judged, with one exception: a printed reference that no index lists is read once by a model before it counts as a citation error. Claims are extracted by a model and kept only when their quote appears verbatim in the text; each cited source is then checked, with a model’s help, for whether it says what the claim relies on. Those verdicts can be wrong — read the claim’s quote and the cited source before relying on one.
Statistics and arithmetic are recomputed, not judged.
Confidence bands are shown only for fields calibrated on our annotated test set. None is calibrated yet, so no band is shown.
What counts as a claim ›How we measure confidence ›How we check this ›
Are you an author, or do you see a problem with this page? Request a review
How to cite
Cite CoChat for the checks on this page, and the paper for its own findings.
- This page
- CoChat. (2026). Citation check: In Situ Observation of Voltage‐Induced Multilevel Resistive Switching in Solid Electrolyte Memory. https://app.cochat.ai/papers/10.1002/adma.201100507
- The paper
- Choi, S., Park, G., Kim, K., Cho, S., Yang, W., Li, X., Moon, J., Lee, K., & Kim, K. (2011). In Situ Observation of Voltage‐Induced Multilevel Resistive Switching in Solid Electrolyte Memory. Advanced Materials. https://doi.org/10.1002/adma.201100507
Data sources
Bibliographic data: Semantic Scholar, OpenAlex, Crossref.
Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.