The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Remarkable Enhancement of Hole Transport in Top‐Gated N‐Type Polymer Field‐Effect Transistors by a High‐k Dielectric for Ambipolar Electronic Circuits
Abstract
A remarkable enhancement of p-channel properties is achieved in initially n-channel dominant ambipolar P(NDI2OD-T2) organic field-effect transistors (OFETs) by the use of the fluorinated high-k dielectric P(VDF-TrFE). An almost two orders of magnitude increase in hole mobility (~0.11 cm(2) V(-1) s(-1) ) originates from a strong interface modification at the semiconductor/dielectric interface, which provides high-performance complementary-like inverters and ring oscillator circuits.
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Citations
Cites
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Conjugated Polymer-Based Organic Solar Cells
Günes, S., Neugebauer, H., & Sariciftci, N. S. (2007) · Chemical Reviews · doi:10.1021/cr050149z · Cited by 6,279
Cited by
Toward Printed Integrated Circuits based on Unipolar or Ambipolar Polymer Semiconductors
Baeg, K., Caironi, M., & Noh, Y. (2013) · Advanced Materials · doi:10.1002/adma.201205361 · Cited by 522
Self-citationSteyrleuthner, R., Schubert, M., Howard, I., Klaumünzer, B., Schilling, K., Chen, Z., Saalfrank, P., Laquai, F., Facchetti, A., & Neher, D. (2012) · Journal of the American Chemical Society · doi:10.1021/ja306844f · Cited by 458
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Metadata
- Authors
- Baeg, K., Khim, D., Jung, S., Kang, M., You, I., Kim, D., Facchetti, A., & Noh, Y.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2012-07-09
- Volume
- 24
- Issue
- 40
- Pages
- 5433-5439
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2038785083
- Cited by
- 188
- References
- 2
- FWCI
- 16.07
- Type
- journal article
- Language
- en
- Open access
- closed
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- Baeg, K., Khim, D., Jung, S., Kang, M., You, I., Kim, D., Facchetti, A., & Noh, Y. (2012). Remarkable Enhancement of Hole Transport in Top‐Gated N‐Type Polymer Field‐Effect Transistors by a High‐k Dielectric for Ambipolar Electronic Circuits. Advanced Materials. https://doi.org/10.1002/adma.201201464
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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).
Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.
