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Hole‐Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature

Pattanasattayavong, Pichaya, Yaacobi‐Gross, Nir, Zhao, Kui, Ndjawa, Guy Olivier Ngongang, Li, Jinhua, Yan, Feng, O'Regan, Brian C., Amassian, Aram, Anthopoulos, Thomas D.·2013·Advanced Materials

Abstract

The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm(2) V(-1) s(-1) . By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated.

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Metadata

Authors
Pattanasattayavong, P., Yaacobi‐Gross, N., Zhao, K., Ndjawa, G. O. N., Li, J., Yan, F., O'Regan, B. C., Amassian, A., & Anthopoulos, T. D.
Venue
Advanced Materials
Publisher
Wiley
Published
2012-12-27
Volume
25
Issue
10
Pages
1504-1509
ISSN
  • 0935-9648 (ISSN-L)
  • 1521-4095
OpenAlex
W2154755534
Cited by
222
References
0
FWCI
6.71
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Hole‐Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature. https://app.cochat.ai/papers/10.1002/adma.201202758
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Pattanasattayavong, P., Yaacobi‐Gross, N., Zhao, K., Ndjawa, G. O. N., Li, J., Yan, F., O'Regan, B. C., Amassian, A., & Anthopoulos, T. D. (2013). Hole‐Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature. Advanced Materials. https://doi.org/10.1002/adma.201202758

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Semantic Scholar’s data is described in: Kinney, R., et al. (2023). The Semantic Scholar Open Data Platform. arXiv:2301.10140.