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Hole‐Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature
Abstract
The wide bandgap and highly transparent inorganic compound copper(I) thiocyanate (CuSCN) is used for the first time to fabricate p-type thin-film transistors processed from solution at room temperature. By combining CuSCN with the high-k relaxor ferroelectric polymeric dielectric P(VDF-TrFE-CFE), we demonstrate low-voltage transistors with hole mobilities on the order of 0.1 cm(2) V(-1) s(-1) . By integrating two CuSCN transistors, unipolar logic NOT gates are also demonstrated.
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Cited by
Inorganic hole conductor-based lead halide perovskite solar cells with 12.4% conversion efficiency
Qin, P., Tanaka, S., Ito, S., Tetreault, N., Manabe, K., Nishino, H., Nazeeruddin, M. K., & Grätzel, M. (2014) · Nature Communications · doi:10.1038/ncomms4834 · Cited by 894
Advances in hole transport materials engineering for stable and efficient perovskite solar cells
Bakr, Z. H., Wali, Q., Fakharuddin, A., Schmidt-Mende, L., Brown, T. M., & Jose, R. (2017) · Nano Energy · doi:10.1016/j.nanoen.2017.02.025 · Cited by 455
Morán, G., Arrechea, S., Cruz, P. D. L., Cuesta, V., Biswas, S., Palomares, E., Sharma, G. D., & Langa, F. (2016) · Journal of Materials Chemistry A · doi:10.1039/c6ta04369k · Cited by 43
Metadata
- Authors
- Pattanasattayavong, P., Yaacobi‐Gross, N., Zhao, K., Ndjawa, G. O. N., Li, J., Yan, F., O'Regan, B. C., Amassian, A., & Anthopoulos, T. D.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2012-12-27
- Volume
- 25
- Issue
- 10
- Pages
- 1504-1509
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2154755534
- Cited by
- 222
- References
- 0
- FWCI
- 6.71
- Type
- journal article
- Language
- en
- Open access
- closed
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- CoChat. (2026). Citation check: Hole‐Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature. https://app.cochat.ai/papers/10.1002/adma.201202758
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- Pattanasattayavong, P., Yaacobi‐Gross, N., Zhao, K., Ndjawa, G. O. N., Li, J., Yan, F., O'Regan, B. C., Amassian, A., & Anthopoulos, T. D. (2013). Hole‐Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature. Advanced Materials. https://doi.org/10.1002/adma.201202758
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