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Cited by 197

The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.

Anti‐Solvent Derived Non‐Stacked Reduced Graphene Oxide for High Performance Supercapacitors

Yoon, Yeoheung, Lee, Keunsik, Baik, Chul, Yoo, Heejoun, Min, Misook, Park, Younghun, Lee, Sae Mi, Lee, Hyoyoung·2013·Advanced Materials

Abstract

An anti-solvent for graphene oxide (GO), hexane, is introduced to increase the surface area and the pore volume of the non-stacked GO/reduced GO 3D structure and allows the formation of a highly crumpled non-stacked GO powder, which clearly shows ideal supercapacitor behavior.

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Crossref · 10.1002/adma.201301230

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Metadata

Authors
Yoon, Y., Lee, K., Baik, C., Yoo, H., Min, M., Park, Y., Lee, S. M., & Lee, H.
Venue
Advanced Materials
Publisher
Wiley
Published
2013-06-21
Volume
25
Issue
32
Pages
4437-4444
ISSN
  • 0935-9648 (ISSN-L)
  • 1521-4095
OpenAlex
W2098915534
Cited by
197
References
2
FWCI
10.48
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Anti‐Solvent Derived Non‐Stacked Reduced Graphene Oxide for High Performance Supercapacitors. https://app.cochat.ai/papers/10.1002/adma.201301230
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Yoon, Y., Lee, K., Baik, C., Yoo, H., Min, M., Park, Y., Lee, S. M., & Lee, H. (2013). Anti‐Solvent Derived Non‐Stacked Reduced Graphene Oxide for High Performance Supercapacitors. Advanced Materials. https://doi.org/10.1002/adma.201301230

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