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Cited by 248

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Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene‐Based Field‐Effect Transistors

Wang, Lifeng, Wu, Bin, Chen, Jisi, Liu, Hongtao, Hu, Pingan, Liu, Yunqi·2014·Advanced Materials

Abstract

Viable and general techniques that allow effective size control of triangular-shaped, single-crystal, monolayer h-BN domains grown by the CVD method, direct optical visualization of h-BN domains, and the cleaning of the h-BN surface to achieve reliable graphene device quality are reported for the first time. This study points to a critical role of the interfacial properties between the graphene and the monolayer h-BN in determining reliable, enhanced graphene-device performance.

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Metadata

Authors
Wang, L., Wu, B., Chen, J., Liu, H., Hu, P., & Liu, Y.
Venue
Advanced Materials
Publisher
Wiley
Published
2013-12-17
Volume
26
Issue
10
Pages
1559-1564
ISSN
  • 0935-9648 (ISSN-L)
  • 1521-4095
OpenAlex
W2092878282
Cited by
248
References
0
FWCI
8.44
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene‐Based Field‐Effect Transistors. https://app.cochat.ai/papers/10.1002/adma.201304937
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Wang, L., Wu, B., Chen, J., Liu, H., Hu, P., & Liu, Y. (2014). Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene‐Based Field‐Effect Transistors. Advanced Materials. https://doi.org/10.1002/adma.201304937

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