The DOI matches its Crossref record; 35 of the 35 references it cites were found in a registry or an index.
Growth of Large‐Area 2D MoS2(1‐x)Se2 x Semiconductor Alloys
Abstract
Semiconducting MoS₂(₁-x) Se₂x mono-layers where x = 0-0.40 are successfully grown over large areas. A random arrangement of the S and Se atoms and a tunable bandgap photoluminescence are observed. Atomically thin, 2D semiconductor alloys with tunable bandgaps have potential applications in nano- and opto-electronics. Field-effect transistors fabricated with the monolayers exhibit high on/off ratios of >10(5).
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Cited by
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Metadata
- Authors
- Feng, Q., Zhu, Y., Hong, J., Zhang, M., Duan, W., Mao, N., Wu, J., Xu, H., Dong, F., Lin, F., Jin, C., Wang, C., Zhang, J., & Xie, L.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2014-02-20
- Volume
- 26
- Issue
- 17
- Pages
- 2648-2653
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2011615548
- Cited by
- 408
- References
- 35
- FWCI
- 19.80
- Type
- journal article
- Language
- en
- Open access
- closed
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- Feng, Q., Zhu, Y., Hong, J., Zhang, M., Duan, W., Mao, N., Wu, J., Xu, H., Dong, F., Lin, F., Jin, C., Wang, C., Zhang, J., & Xie, L. (2014). Growth of Large‐Area 2D MoS2(1‐x)Se2 x Semiconductor Alloys. Advanced Materials. https://doi.org/10.1002/adma.201306095
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