The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.
An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions
Open accessAbstract
A multifunctional optoelectronic resistive switching memory, composed of a simple ITO/CeO2- x/AlOy/Al structure, is demonstrated. Arising from the photo-induced detrapping, electrode-injection and retrapping of electrons in the CeO2-x/AlOy/Al interfacial region, the device shows broadband, linear, and persistent photoresponses that can be used for the integration of demodulating, arithmetic, and memory functions in a single device for future optoelectronic interconnect systems.
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Cites
Nanoionics-based resistive switching memories
Waser, R., & Aono, M. (2007) · Nature Materials · doi:10.1038/nmat2023 · Cited by 4,923
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Jo, S. H., Chang, T., Ebong, I., Bhadviya, B. B., Mazumder, P., & Lu, W. (2010) · Nano Letters · doi:10.1021/nl904092h · Cited by 4,174
Self-citation‘Memristive’ switches enable ‘stateful’ logic operations via material implication
Borghetti, J., Snider, G. S., Kuekes, P. J., Yang, J. J., Stewart, D. R., & Williams, R. S. (2010) · Nature · doi:10.1038/nature08940 · Cited by 1,929
Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
Roy, K., Padmanabhan, M., Goswami, S., Sai, T. P., Ramalingam, G., Raghavan, S., & Ghosh, A. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.206 · Cited by 1,436
Cited by
An Oxide Schottky Junction Artificial Optoelectronic Synapse
Gao, S., Liu, G., Yang, H., Hu, C., Chen, Q., Gong, G., Xue, W., Yi, X., Shang, J., & Li, R.-W. (2019) · ACS Nano · doi:10.1021/acsnano.9b00340 · Cited by 494
Self-citationThe Future of Memristors: Materials Engineering and Neural Networks
Sun, K., Chen, J., & Yan, X. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202006773 · Cited by 482
Mehonic, A., Sebastian, A., Rajendran, B., Simeone, O., Vasilaki, E., & Kenyon, A. J. (2020) · Advanced Intelligent Systems · doi:10.1002/aisy.202000085 · Cited by 331
2D MoS2 Neuromorphic Devices for Brain‐Like Computational Systems
Jiang, J., Guo, J., Wan, X., Yang, Y., Xie, H., Niu, D., Yang, J., He, J., Gao, Y., & Wan, Q. (2017) · Small · doi:10.1002/smll.201700933 · Cited by 328
He, H., Yang, R., Zhou, W., Huang, H., Xiong, J., Gan, L., Zhai, T., & Guo, X. (2018) · Small · doi:10.1002/smll.201800079 · Cited by 312
Metadata
- Authors
- Tan, H., Liu, G., Zhu, X., Yang, H., Chen, B., Chen, X., Shang, J., Lu, W. D., Wu, Y., & Li, R.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2015-03-18
- Volume
- 27
- Issue
- 17
- Pages
- 2797-2803
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2141467259
- Cited by
- 233
- References
- 4
- FWCI
- 7.86
- Type
- journal article
- Language
- en
- Open access
- green
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- Tan, H., Liu, G., Zhu, X., Yang, H., Chen, B., Chen, X., Shang, J., Lu, W. D., Wu, Y., & Li, R. (2015). An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions. Advanced Materials. https://doi.org/10.1002/adma.201500039
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