The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening
Open accessAbstract
By combining a high-κ dielectric substrate and a high density of charge carriers, Coulomb impurities in MoS2 can be effectively screened, leading to an unprecedented room-temperature mobility of ≈150 cm(2) V(-1) s(-1) and room-temperature phonon-limited transport in a monolayer MoS2 transistor for the first time.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Cited by
Analyzing the Carrier Mobility in Transition‐Metal Dichalcogenide MoS2 Field‐Effect Transistors
Yu, Z., Ong, Z., Li, S., Xu, J., Zhang, G., Zhang, Y., Shi, Y., & Wang, X. (2017) · Advanced Functional Materials · doi:10.1002/adfm.201604093 · Cited by 426
Self-citationSize-dependent phononic thermal transport in low-dimensional nanomaterials
Zhang, Z., Ouyang, Y., Cheng, Y., Chen, J., Li, N., & Zhang, G. (2020) · Physics Reports · doi:10.1016/j.physrep.2020.03.001 · Cited by 341
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Metadata
- Authors
- Yu, Z., Ong, Z., Pan, Y., Cui, Y., Xin, R., Shi, Y., Wang, B., Wu, Y., Chen, T., Zhang, Y., Zhang, G., & Wang, X.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2015-11-25
- Volume
- 28
- Issue
- 3
- Pages
- 547-552
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2963035958
- Cited by
- 287
- References
- 1
- FWCI
- 8.66
- Type
- journal article
- Language
- en
- Open access
- green
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- Yu, Z., Ong, Z., Pan, Y., Cui, Y., Xin, R., Shi, Y., Wang, B., Wu, Y., Chen, T., Zhang, Y., Zhang, G., & Wang, X. (2016). Realization of Room‐Temperature Phonon‐Limited Carrier Transport in Monolayer MoS2 by Dielectric and Carrier Screening. Advanced Materials. https://doi.org/10.1002/adma.201503033
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