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Electric and Photovoltaic Behavior of a Few‐Layer α‐MoTe2/MoS2 Dichalcogenide Heterojunction
Abstract
Mo-based van der Waals heterojunction p-n diodes with p-type α-MoTe2 and n-type MoS2 are fabricated on glass, and demonstrate excellent static and dynamic device performances at a low voltage of 5 V, with an ON/OFF current ratio higher than 10(3) , ideality factors of 1.06, dynamic rectification at a high frequency of 1 kHz, high photoresponsivity of 322 mA W(-1) , and an external quantum efficiency of 85% under blue-light illumination.
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Cited by
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Shi, E., Gao, Y., Finkenauer, B. P., Akriti, A., Coffey, A. H., & Dou, L. (2018) · Chemical Society Reviews · doi:10.1039/c7cs00886d · Cited by 445
Self‐Powered Photodetectors Based on 2D Materials
Qiao, H., Huang, Z., Ren, X., Liu, S., Zhang, Y., Qi, X., & Zhang, H. (2020) · Advanced Optical Materials · doi:10.1002/adom.201900765 · Cited by 435
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Atomically thin p–n junctions based on two-dimensional materials
Frisenda, R., Molina-Mendoza, A. J., Mueller, T., Castellanos-Gomez, A., & van der Zant, H. S. J. (2018) · Chemical Society Reviews · doi:10.1039/c7cs00880e · Cited by 312
Yuan, J., Sun, T., Hu, Z., Yu, W., Ma, W., Zhang, K., Sun, B., Lau, S. P., Bao, Q., Lin, S., et al. (2018) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.8b13620 · Cited by 152
Metadata
- Authors
- Pezeshki, A., Shokouh, S. H. H., Nazari, T., Oh, K., & Im, S.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2016-02-29
- Volume
- 28
- Issue
- 16
- Pages
- 3216-3222
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2288318370
- Cited by
- 292
- References
- 0
- FWCI
- 16.01
- Type
- journal article
- Language
- en
- Open access
- closed
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- Pezeshki, A., Shokouh, S. H. H., Nazari, T., Oh, K., & Im, S. (2016). Electric and Photovoltaic Behavior of a Few‐Layer α‐MoTe2/MoS2 Dichalcogenide Heterojunction. Advanced Materials. https://doi.org/10.1002/adma.201504090
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