The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.
Observation of Strong Interlayer Coupling in MoS2/WS2 Heterostructures
Abstract
Epitaxial growth of A-A and A-B stacking MoS2 on WS2 via a two-step chemical vapor deposition method is reported. These epitaxial heterostructures show an atomic clean interface and a strong interlayer coupling, as evidenced by systematic characterization. Low-frequency Raman breathing and shear modes are observed in commensurate stacking bilayers for the first time; these can serve as persuasive fingerprints for interfacial quality and stacking configurations.
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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Cited by
Zheng, Q., Chu, W., Zhao, C., Zhang, L., Guo, H., Wang, Y., Jiang, X., & Zhao, J. (2019) · WIREs Computational Molecular Science · doi:10.1002/wcms.1411 · Cited by 452
Metadata
- Authors
- Zhang, J., Wang, J., Chen, P., Sun, Y., Wu, S., Jia, Z., Lu, X., Yu, H., Chen, W., Zhu, J., Xie, G., Yang, R., Shi, D., Xu, X., Xiang, J., Liu, K., & Zhang, G.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2015-12-28
- Volume
- 28
- Issue
- 10
- Pages
- 1950-1956
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2288442983
- Cited by
- 276
- References
- 1
- FWCI
- 9.73
- Type
- journal article
- Language
- en
- Open access
- closed
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- Zhang, J., Wang, J., Chen, P., Sun, Y., Wu, S., Jia, Z., Lu, X., Yu, H., Chen, W., Zhu, J., Xie, G., Yang, R., Shi, D., Xu, X., Xiang, J., Liu, K., & Zhang, G. (2016). Observation of Strong Interlayer Coupling in MoS2/WS2 Heterostructures. Advanced Materials. https://doi.org/10.1002/adma.201504631
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