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Cited by 228

The DOI matches its Crossref record; 4 of the 4 references it cites were found in a registry or an index.

Piezophototronic Effect in Single‐Atomic‐Layer MoS2 for Strain‐Gated Flexible Optoelectronics

Wu, Wenzhuo, Wang, Lei, Yu, Ruomeng, Liu, Yuanyue, Wei, Su‐Huai, Hone, James, Wang, Zhong Lin·2016·Advanced Materials

Abstract

Strain-gated flexible optoelectronics are reported based on monolayer MoS2. Utilizing the piezoelectric polarization created at the metal-MoS2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.

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Metadata

Authors
Wu, W., Wang, L., Yu, R., Liu, Y., Wei, S., Hone, J., & Wang, Z. L.
Venue
Advanced Materials
Publisher
Wiley
Published
2016-08-03
Volume
28
Issue
38
Pages
8463-8468
ISSN
  • 0935-9648 (ISSN-L)
  • 1521-4095
OpenAlex
W2478695438
Cited by
228
References
4
FWCI
12.37
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Piezophototronic Effect in Single‐Atomic‐Layer MoS2 for Strain‐Gated Flexible Optoelectronics. https://app.cochat.ai/papers/10.1002/adma.201602854
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Wu, W., Wang, L., Yu, R., Liu, Y., Wei, S., Hone, J., & Wang, Z. L. (2016). Piezophototronic Effect in Single‐Atomic‐Layer MoS2 for Strain‐Gated Flexible Optoelectronics. Advanced Materials. https://doi.org/10.1002/adma.201602854

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