The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Graphene‐β‐Ga2O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application
Abstract
A deep UV light photodetector is assembled by coating multilayer graphene on beta-gallium oxide (β-Ga2O3) wafer. Optoelectronic analysis reveals that the heterojunction device is virtually blind to light illumination with wavelength longer than 280 nm, but is highly sensitive to 254 nm light with very good stability and reproducibility.
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Cites
Geim, A. K., & Novoselov, K. S. (2007) · Nature Materials · doi:10.1038/nmat1849 · Cited by 39,979
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Cited by
Self-powered diamond/β-Ga2O3 photodetectors for solar-blind imaging
Chen, Y.-C., Lu, Y.-J., Lin, C.-N., Tian, Y.-Z., Gao, C.-J., Dong, L., & Shan, C.-X. (2018) · Journal of Materials Chemistry C · doi:10.1039/c8tc01122b · Cited by 394
Ultrafast Photodetector by Integrating Perovskite Directly on Silicon Wafer
Geng, X., Wang, F., Tian, H., Feng, Q., Zhang, H., Liang, R., Shen, Y., Ju, Z., Gou, G.-Y., Deng, N., et al. (2020) · ACS Nano · doi:10.1021/acsnano.9b06345 · Cited by 136
Metadata
- Authors
- Kong, W., Wu, G., Wang, K., Zhang, T., Zou, Y., Wang, D., & Luo, L.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2016-10-17
- Volume
- 28
- Issue
- 48
- Pages
- 10725-10731
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2536135121
- Cited by
- 726
- References
- 2
- FWCI
- 18.10
- Type
- journal article
- Language
- en
- Open access
- closed
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- Kong, W., Wu, G., Wang, K., Zhang, T., Zou, Y., Wang, D., & Luo, L. (2016). Graphene‐β‐Ga2O3 Heterojunction for Highly Sensitive Deep UV Photodetector Application. Advanced Materials. https://doi.org/10.1002/adma.201604049
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