The DOI matches its Crossref record; 27 of the 27 references it cites were found in a registry or an index.
Quaternary 2D Transition Metal Dichalcogenides (TMDs) with Tunable Bandgap
Open accessAbstract
Alloying/doping in 2D material is important due to wide range bandgap tunability. Increasing the number of components would increase the degree of freedom which can provide more flexibility in tuning the bandgap and also reduces the growth temperature. Here, synthesis of quaternary alloys MoxW 1−xS 2ySe 2(1−y) is reported using chemical vapor deposition. The composition of alloys is tuned by changing the growth temperatures. As a result, the bandgap can be tuned which varies from 1.61 to 1.85 eV. The detailed theoretical calculation supports the experimental observation and shows a possibility of wide tunability of bandgap.
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Cited by
Bandgap engineering of two-dimensional semiconductor materials
Chaves, A., Azadani, J. G., Alsalman, H., da Costa, D. R., Frisenda, R., Chaves, A. J., Song, S. H., Kim, Y. D., He, D., Zhou, J., et al. (2020) · npj 2D Materials and Applications · doi:10.1038/s41699-020-00162-4 · Cited by 1,296
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Low Energy Implantation into Transition-Metal Dichalcogenide Monolayers to Form Janus Structures
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Metadata
- Authors
- Susarla, S., Kutana, A., Hachtel, J. A., Kochat, V., Apte, A., Vajtai, R., Idrobo, J. C., Yakobson, B. I., Tiwary, C. S., & Ajayan, P. M.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2017-07-14
- Volume
- 29
- Issue
- 35
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2735698184
- Cited by
- 285
- References
- 27
- FWCI
- 9.37
- Type
- journal article
- Language
- en
- Open access
- green
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- Susarla, S., Kutana, A., Hachtel, J. A., Kochat, V., Apte, A., Vajtai, R., Idrobo, J. C., Yakobson, B. I., Tiwary, C. S., & Ajayan, P. M. (2017). Quaternary 2D Transition Metal Dichalcogenides (TMDs) with Tunable Bandgap. Advanced Materials. https://doi.org/10.1002/adma.201702457
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