The DOI matches its Crossref record; 2 of the 2 references it cites were found in a registry or an index.
Graphene‐Contacted Ultrashort Channel Monolayer MoS2 Transistors
Abstract
2D semiconductors are promising channel materials for field‐effect transistors (FETs) with potentially strong immunity to short‐channel effects (SCEs). In this paper, a grain boundary widening technique is developed to fabricate graphene electrodes for contacting monolayer MoS 2. FETs with channel lengths scaling down to ≈4 nm can be realized reliably. These graphene‐contacted ultrashort channel MoS 2 FETs exhibit superior performances including the nearly Ohmic contacts and excellent immunity to SCEs. This work provides a facile route toward the fabrication of various 2D material‐based devices for ultrascaled electronics.
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Cites
Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronics
Wu, W., Wang, L., Li, Y., Zhang, F., Lin, L., Niu, S., Chenet, D., Zhang, X., Hao, Y., Heinz, T. F., et al. (2014) · Nature · doi:10.1038/nature13792 · Cited by 2,287
Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices
Roy, K., Padmanabhan, M., Goswami, S., Sai, T. P., Ramalingam, G., Raghavan, S., & Ghosh, A. (2013) · Nature Nanotechnology · doi:10.1038/nnano.2013.206 · Cited by 1,436
Cited by
Two-dimensional transistors beyond graphene and TMDCs
Liu, Y., Duan, X., Huang, Y., & Duan, X. (2018) · Chemical Society Reviews · doi:10.1039/c8cs00318a · Cited by 474
A Reliable All‐2D Materials Artificial Synapse for High Energy‐Efficient Neuromorphic Computing
Tang, J., He, C., Tang, J., Yue, K., Zhang, Q., Liu, Y., Wang, Q., Wang, S., Li, N., Shen, C., et al. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202011083 · Cited by 163
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Metadata
- Authors
- Xie, L., Liao, M., Wang, S., Yu, H., Du, L., Tang, J., Zhao, J., Zhang, J., Chen, P., Lu, X., Wang, G., Xie, G., Yang, R., Shi, D., & Zhang, G.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2017-07-28
- Volume
- 29
- Issue
- 37
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2741011800
- Cited by
- 283
- References
- 2
- FWCI
- 11.52
- Type
- journal article
- Language
- en
- Open access
- closed
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- Xie, L., Liao, M., Wang, S., Yu, H., Du, L., Tang, J., Zhao, J., Zhang, J., Chen, P., Lu, X., Wang, G., Xie, G., Yang, R., Shi, D., & Zhang, G. (2017). Graphene‐Contacted Ultrashort Channel Monolayer MoS2 Transistors. Advanced Materials. https://doi.org/10.1002/adma.201702522
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