The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
2D GeP: An Unexploited Low‐Symmetry Semiconductor with Strong In‐Plane Anisotropy
Abstract
Germanium phosphide (GeP), a new member of the Group IV–Group V compounds, is introduced into the fast growing 2D family with experimental and theoretical demonstration of strong anisotropic physical properties. The indirect band gap of GeP can be drastically tuned from 1.68 eV for monolayer to 0.51 eV for bulk, with highly anisotropic dispersions of band structures. Thin GeP shows strong anisotropy of phonon vibrations. Moreover, photodetectors based on GeP flakes show highly anisotropic behavior with anisotropic factors of 1.52 and 1.83 for conductance and photoresponsivity, respectively. This work lays the foundation and ignites future research interests in Group IV–Group V compound 2D materials.
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Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
Cited by
Emerging in‐plane anisotropic two‐dimensional materials
Li, L., Han, W., Pi, L., Niu, P., Han, J., Wang, C., Su, B., Li, H., Xiong, J., Bando, Y., et al. (2019) · InfoMat · doi:10.1002/inf2.12005 · Cited by 382
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Metadata
- Authors
- Li, L., Wang, W., Gong, P., Zhu, X., Deng, B., Shi, X., Gao, G., Li, H., & Zhai, T.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2018-02-26
- Volume
- 30
- Issue
- 14
- Pages
- e1706771-e1706771
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2790545114
- Cited by
- 313
- References
- 3
- FWCI
- 14.19
- Type
- journal article
- Language
- en
- Open access
- closed
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- Li, L., Wang, W., Gong, P., Zhu, X., Deng, B., Shi, X., Gao, G., Li, H., & Zhai, T. (2018). 2D GeP: An Unexploited Low‐Symmetry Semiconductor with Strong In‐Plane Anisotropy. Advanced Materials. https://doi.org/10.1002/adma.201706771
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