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Cited by 499

The DOI matches its Crossref record; 41 of the 41 references it cites were found in a registry or an index.

Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics

Zhu, Jiadi, Yang, Yuchao, Jia, Rundong, Liang, Zhongxin, Zhu, Wen, Rehman, Zia Ur, Bao, Lin, Zhang, Xiaoxian, Cai, Yimao, Song, Li, Huang, Ru·2018·Advanced Materials

Abstract

Neuromorphic computing represents an innovative technology that can perform intelligent and energy‐efficient computation, whereas construction of neuromorphic systems requires biorealistic synaptic elements with rich dynamics that can be tuned based on a robust mechanism. Here, an ionic‐gating‐modulated synaptic transistor based on layered crystals of transitional metal dichalcogenides and phosphorus trichalcogenides is demonstrated, which produce a diversity of short‐term and long‐term plasticity including excitatory postsynaptic current, paired pulse facilitation, spiking‐rate‐dependent plasticity, dynamic filtering, etc., with remarkable linearity and ultralow energy consumption of ≈30 fJ per spike. Detailed transmission electron microscopy characterization and ab initio calculation reveal two‐stage ionic gating effects, namely, surface adsorption and internal intercalation in the channel medium, causing different poststimulation diffusive dynamics and thus accounting for the observed short‐term and long‐term plasticity, respectively. The synaptic activity can therefore be effectively manipulated by tailoring the ionic gating and consequent diffusion dynamics with varied thickness and structure of the van der Waals material as well as the number, duration, rate, and polarity of gate stimulations, making the present synaptic transistors intriguing candidates for low‐power neuromorphic systems.

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Metadata

Authors
Zhu, J., Yang, Y., Jia, R., Liang, Z., Zhu, W., Rehman, Z. U., Bao, L., Zhang, X., Cai, Y., Song, L., & Huang, R.
Venue
Advanced Materials
Publisher
Wiley
Published
2018-04-17
Volume
30
Issue
21
Pages
e1800195-e1800195
ISSN
  • 0935-9648 (ISSN-L)
  • 1521-4095
OpenAlex
W2800161635
Cited by
499
References
41
FWCI
23.52
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics. https://app.cochat.ai/papers/10.1002/adma.201800195
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Zhu, J., Yang, Y., Jia, R., Liang, Z., Zhu, W., Rehman, Z. U., Bao, L., Zhang, X., Cai, Y., Song, L., & Huang, R. (2018). Ion Gated Synaptic Transistors Based on 2D van der Waals Crystals with Tunable Diffusive Dynamics. Advanced Materials. https://doi.org/10.1002/adma.201800195

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