The DOI matches its Crossref record; 53 of the 53 references it cites were found in a registry or an index.
Broadband Extrinsic Self‐Trapped Exciton Emission in Sn‐Doped 2D Lead‐Halide Perovskites
Abstract
As emerging efficient emitters, metal‐halide perovskites offer the intriguing potential to the low‐cost light emitting devices. However, semiconductors generally suffer from severe luminescence quenching due to insufficient confinement of excitons (bound electron–hole pairs). Here, Sn‐triggered extrinsic self‐trapping of excitons in bulk 2D perovskite crystal, PEA 2 PbI 4 (PEA = phenylethylammonium), is reported, where exciton self‐trapping never occurs in its pure state. By creating local potential wells, isoelectronic Sn dopants initiate the localization of excitons, which would further induce the large lattice deformation around the impurities to accommodate the self‐trapped excitons. With such self‐trapped states, the Sn‐doped perovskites generate broadband red‐to‐near‐infrared (NIR) emission at room temperature due to strong exciton–phonon coupling, with a remarkable quantum yield increase from 0.7% to 6.0% (8.6 folds), reaching 42.3% under a 100 mW cm−2 excitation by extrapolation. The quantum yield enhancement stems from substantial higher thermal quench activation energy of self‐trapped excitons than that of free excitons (120 vs 35 meV). It is further revealed that the fast exciton diffusion involves in the initial energy transfer step by transient absorption spectroscopy. This dopant‐induced extrinsic exciton self‐trapping approach paves the way for extending the spectral range of perovskite emitters, and may find emerging application in efficient supercontinuum sources.
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Cites
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Cited by
Chen, J., Wang, J., Xu, X., Li, J., Song, J., Lan, S., Liu, S., Cai, B., Han, B., Precht, J. T., et al. (2021) · Nature Photonics · doi:10.1038/s41566-020-00743-1 · Cited by 380
Mn2+‐Doped Metal Halide Perovskites: Structure, Photoluminescence, and Application
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Advanced Organic–Inorganic Hybrid Materials for Optoelectronic Applications
Zhou, K., Qi, B., Liu, Z., Wang, X., Sun, Y., & Zhang, L. (2024) · Advanced Functional Materials · doi:10.1002/adfm.202411671 · Cited by 228
Self-citation
Metadata
- Authors
- Yu, J., Kong, J., Hao, W., Guo, X., He, H., Leow, W. R., Liu, Z., Cai, P., Qian, G., Li, S., Chen, X., & Chen, X.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2018-12-17
- Volume
- 31
- Issue
- 7
- Pages
- e1806385-e1806385
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2903943792
- Cited by
- 284
- References
- 53
- FWCI
- 9.22
- Type
- journal article
- Language
- en
- Open access
- closed
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- Yu, J., Kong, J., Hao, W., Guo, X., He, H., Leow, W. R., Liu, Z., Cai, P., Qian, G., Li, S., Chen, X., & Chen, X. (2019). Broadband Extrinsic Self‐Trapped Exciton Emission in Sn‐Doped 2D Lead‐Halide Perovskites. Advanced Materials. https://doi.org/10.1002/adma.201806385
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