The DOI matches its Crossref record; 24 of the 24 references it cites were found in a registry or an index.
Thinnest Nonvolatile Memory Based on Monolayer h‐BN
Abstract
2D materials have attracted much interest over the past decade in nanoelectronics. However, it was believed that the atomically thin layered materials are not able to show memristive effect in vertically stacked structure, until the recent discovery of monolayer transition metal dichalcogenide (TMD) atomristors, overcoming the scaling limit to sub‐nanometer. Herein, the nonvolatile resistance switching (NVRS) phenomenon in monolayer hexagonal boron nitride (h‐BN), a typical 2D insulator, is reported. The h‐BN atomristors are studied using different electrodes and structures, featuring forming‐free switching in both unipolar and bipolar operations, with large on/off ratio (up to 10 7). Moreover, fast switching speed (<15 ns) is demonstrated via pulse operation. Compared with monolayer TMDs, the one‐atom‐thin h‐BN sheet reduces the vertical scaling to ≈0.33 nm, representing a record thickness for memory materials. Simulation results based on ab‐initio method reveal that substitution of metal ions into h‐BN vacancies during electrical switching is a likely mechanism. The existence of NVRS in monolayer h‐BN indicates fruitful interactions between defects, metal ions and interfaces, and can advance emerging applications on ultrathin flexible memory, printed electronics, neuromorphic computing, and radio frequency switches.
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Cites
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Self-citationOn Pre-Breakdown Phenomena in Insulators and Electronic Semi-Conductors
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Cited by
The Future of Memristors: Materials Engineering and Neural Networks
Sun, K., Chen, J., & Yan, X. (2021) · Advanced Functional Materials · doi:10.1002/adfm.202006773 · Cited by 482
2D Material Based Synaptic Devices for Neuromorphic Computing
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Hardware Implementation of Neuromorphic Computing Using Large‐Scale Memristor Crossbar Arrays
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In-Depth Physical Mechanism Analysis and Wearable Applications of HfOx-Based Flexible Memristors
Zhu, S., Sun, B., Zhou, G., Guo, T., Ke, C., Chen, Y., Yang, F., Zhang, Y., Shao, J., & Zhao, Y. (2023) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.2c16569 · Cited by 76
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Metadata
- Authors
- Wu, X., Ge, R., Chen, P., Chou, H., Zhang, Z., Zhang, Y., Banerjee, S., Chiang, M., Lee, J. C., & Akinwande, D.
- Venue
- Advanced Materials
- Publisher
- Wiley
- Published
- 2019-02-17
- Volume
- 31
- Issue
- 15
- Pages
- e1806790-e1806790
- ISSN
- 0935-9648 (ISSN-L)
- 1521-4095
- OpenAlex
- W2916924271
- Cited by
- 282
- References
- 24
- FWCI
- 12.78
- Type
- journal article
- Language
- en
- Open access
- closed
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- Wu, X., Ge, R., Chen, P., Chou, H., Zhang, Z., Zhang, Y., Banerjee, S., Chiang, M., Lee, J. C., & Akinwande, D. (2019). Thinnest Nonvolatile Memory Based on Monolayer h‐BN. Advanced Materials. https://doi.org/10.1002/adma.201806790
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