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Cited by 204

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Ultrahigh Photoresponse of Few‐Layer TiS3 Nanoribbon Transistors

Open access
Island, Joshua O., Buscema, Michele, Barawi, Mariam, Clamagirand, José M., Ares, José R., Sánchez, Carlos, Ferrer, Isabel J., Steele, Gary A., van der Zant, Herre S. J., Castellanos‐Gomez, Andres·2014·Advanced Optical Materials

Abstract

TiS3 nanoribbons with thickness down to 15 nm are isolated by viscoelastic mechanical exfoliation. Field-effect transistors are fabricated and their electrical characteristics are studied in the dark state and upon illumination. An ultrahigh photoresponse up to 3000 A/W, a bandgap of 1 eV, and response times of about 4 ms are found making TiS3 a state-of-the-art material in photodetection.

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Crossref · 10.1002/adom.201400043

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Metadata

Authors
Island, J. O., Buscema, M., Barawi, M., Clamagirand, J. M., Ares, J. R., Sánchez, C., Ferrer, I. J., Steele, G. A., van der Zant, H. S. J., & Castellanos‐Gomez, A.
Venue
Advanced Optical Materials
Publisher
Wiley
Published
2014-04-08
Volume
2
Issue
7
Pages
641-645
ISSN
2195-1071 (ISSN-L)
OpenAlex
W2051519074
Cited by
204
References
1
FWCI
9.83
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Ultrahigh Photoresponse of Few‐Layer TiS3 Nanoribbon Transistors. https://app.cochat.ai/papers/10.1002/adom.201400043
The paper
Island, J. O., Buscema, M., Barawi, M., Clamagirand, J. M., Ares, J. R., Sánchez, C., Ferrer, I. J., Steele, G. A., van der Zant, H. S. J., & Castellanos‐Gomez, A. (2014). Ultrahigh Photoresponse of Few‐Layer TiS3 Nanoribbon Transistors. Advanced Optical Materials. https://doi.org/10.1002/adom.201400043

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Contains information from the Semantic Scholar Academic Graph Datasets, made available under the ODC Attribution License (ODC-BY 1.0).

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