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Cited by 46Advanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesPerovskite Materials and Applications

The DOI matches its Crossref record.

High‐Performance and Environmentally Robust Multilevel Lead‐Free Organotin Halide Perovskite Memristors

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Liu, Zehen, Tang, Hao, Cheng, Pengpeng, Kang, Ruyan, Zhou, Jian, Zhao, Xian, Zhao, Jia, Zuo, Zhiyuan·2023·Advanced Electronic Materials
DOI 10.1002/aelm.202201005
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Abstract

Abstract With a striking explosion of digital information, organic–inorganic halide perovskite (OHP) memristors have been regarded as a promising solution to break the von Neumann bottleneck as the nonvolatile computing‐in‐memory architecture. However, toxicity and stability under ambient conditions are two critical issues for practical applications. Here, lead‐free MASnI3 (MASI) perovskites are reported with improved resistive switching (RS) performance via defects passivating by introducing PEACl. In‐Sn/PEACl‐MASI/PEDOT:PSS/ITO memristor arrays (10 × 10) exhibit reproducible RS with low SET/RESET voltage (VSET/VRESET, +0.58/−0.49 V), ultrahigh ON/OFF ratio (8.5 × 103), stable endurance (2 × 103 cycles), excellent retention (2 × 104 s), high device yield (88%), and multilevel storage. RS remains robust in harsh environments, including high temperature and humidity, long‐term light irradiation, and open‐air conditions. Importantly, a complete physical simulation model that quantitatively and accurately describes RS in vacancy concentration, temperature, and electric potential is proposed originating from conductive filaments formation/rupture. Additionally, PEACl‐MASI memristors are successfully fabricated on polyethylene terephthalate (PET) and Si substrates to explore the potential for large‐scale application on different substrates. The PEACl‐MASI memristors provide an opportunity to develop the next generation of high‐performance and environmentally robust multilevel information storage devices.

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Metadata

Authors
Liu, Z., Tang, H., Cheng, P., Kang, R., Zhou, J., Zhao, X., Zhao, J., & Zuo, Z.
Affiliations
  • Shandong University (CN)
  • Xinjiang Agricultural University (CN)
Corresponding author
  • Zhao, Jia
  • Zuo, Zhiyuan
ORCID
Venue
Advanced Electronic Materials
Publisher
Wiley
Published
2022-10-18
Volume
9
Issue
1
ISSN
2199-160X (ISSN-L)
DOI
10.1002/aelm.202201005
OpenAlex
W4306736835
Cited by
46
References
0
Citations by year
2026: 10 · 2025: 12 · 2024: 17 · 2023: 7
FWCI
2.47
Type
journal article
Language
en
Open access
Licence
Locations
  • Advanced Electronic Materials (publishedVersion, cc-by)
  • DOAJ (DOAJ: Directory of Open Access Journals) (submittedVersion, cc-by-sa)
Funders
National Natural Science Foundation of China (51702186)
Topics
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
  • Physical Sciences › Engineering › Electrical and Electronic Engineering › Perovskite Materials and Applications
Keywords
memristors, organic-inorganic hybrid perovskites, lead-free perovskites, CH3NH3SnI3, resistive switching, multilevel storage, vacancy concentration, conductive filament formation, environmental robustness, non-volatile memory, in-memory computing, polyethylene terephthalate substrate, silicon substrate, physical simulation model

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CoChat. (2026). Citation check: High‐Performance and Environmentally Robust Multilevel Lead‐Free Organotin Halide Perovskite Memristors. https://app.cochat.ai/papers/10.1002/aelm.202201005
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Liu, Z., Tang, H., Cheng, P., Kang, R., Zhou, J., Zhao, X., Zhao, J., & Zuo, Z. (2023). High‐Performance and Environmentally Robust Multilevel Lead‐Free Organotin Halide Perovskite Memristors. Advanced Electronic Materials. https://doi.org/10.1002/aelm.202201005