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Few‐Layer MoS2 Flakes as Active Buffer Layer for Stable Perovskite Solar Cells

Open access
Capasso, Andrea, Matteocci, Fabio, Najafi, Leyla, Prato, Mirko, Buha, Joka, Cinà, Lucio, Pellegrini, Vittorio, Carlo, Aldo Di, Bonaccorso, Francesco·2016·Advanced Energy Materials

Abstract

Solution‐processed few‐layer MoS 2 flakes are exploited as an active buffer layer in hybrid lead–halide perovskite solar cells (PSCs). Glass/FTO/compact‐TiO 2/mesoporous‐TiO 2/CH 3 NH 3 PbI 3/MoS 2/Spiro‐OMeTAD/Au solar cells are realized with the MoS 2 flakes having a twofold function, acting both as a protective layer, by preventing the formation of shunt contacts between the perovskite and the Au electrode, and as a hole transport layer from the perovskite to the Spiro‐OMeTAD. As prepared PSC demonstrates a power conversion efficiency (η) of 13.3%, along with a higher lifetime stability over 550 h with respect to reference PSC without MoS 2 (Δ η/η = −7% vs. Δ η/η = −34%). Large‐area PSCs (1.05 cm 2 active area) are also fabricated to demonstrate the scalability of this approach, achieving η of 11.5%. Our results pave the way toward the implementation of MoS 2 as a material able to boost the shelf life of large‐area perovskite solar cells in view of their commercialization.

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Metadata

Authors
Capasso, A., Matteocci, F., Najafi, L., Prato, M., Buha, J., Cinà, L., Pellegrini, V., Carlo, A. D., & Bonaccorso, F.
Venue
Advanced Energy Materials
Publisher
Wiley
Published
2016-07-12
Volume
6
Issue
16
ISSN
  • 1614-6832 (ISSN-L)
  • 1614-6840
OpenAlex
W2465314963
Cited by
259
References
1
FWCI
11.74
Type
journal article
Language
en
Open access
green

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CoChat. (2026). Citation check: Few‐Layer MoS2 Flakes as Active Buffer Layer for Stable Perovskite Solar Cells. https://app.cochat.ai/papers/10.1002/aenm.201600920
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Capasso, A., Matteocci, F., Najafi, L., Prato, M., Buha, J., Cinà, L., Pellegrini, V., Carlo, A. D., & Bonaccorso, F. (2016). Few‐Layer MoS2 Flakes as Active Buffer Layer for Stable Perovskite Solar Cells. Advanced Energy Materials. https://doi.org/10.1002/aenm.201600920

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