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Cited by 531

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Ga2O3 and GaN Semiconductor Hollow Spheres

Sun, Xiaoming, Li, Yadong·2004·Angewandte Chemie International Edition

Abstract

Carbon spheres are used as templates to prepare semiconductor hollow spheres of Ga2O3 (depicted) and GaN. The thickness and uniformity of the final products are predetermined by the thickness of the active layer of the carbon spheres. The diameter of the spheres can be adjusted in the range of 100 nm to 1.5 μm, which covers the band gaps in the spectral regime from UV to near infrared.

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Metadata

Authors
Sun, X., & Li, Y.
Venue
Angewandte Chemie International Edition
Publisher
Wiley
Published
2004-07-12
Volume
43
Issue
29
Pages
3827-3831
ISSN
  • 1433-7851 (ISSN-L)
  • 1521-3773
OpenAlex
W2078431154
Cited by
531
References
0
FWCI
13.91
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Ga2O3 and GaN Semiconductor Hollow Spheres. https://app.cochat.ai/papers/10.1002/anie.200353212
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Sun, X., & Li, Y. (2004). Ga2O3 and GaN Semiconductor Hollow Spheres. Angewandte Chemie International Edition. https://doi.org/10.1002/anie.200353212

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