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Titanium Trisulfide Monolayer: Theoretical Prediction of a New Direct‐Gap Semiconductor with High and Anisotropic Carrier Mobility
Open accessAbstract
A new two‐dimensional (2D) layered material, namely, titanium trisulfide (TiS 3) monolayer, is predicted to possess novel electronic properties. Ab initio calculations show that the perfect TiS 3 monolayer is a direct‐gap semiconductor with a bandgap of 1.02 eV, close to that of bulk silicon, and with high carrier mobility. More remarkably, the in‐plane electron mobility of the 2D TiS 3 is highly anisotropic, amounting to about 10 000 cm 2 V−1 s−1 in the b direction, which is higher than that of the MoS 2 monolayer, whereas the hole mobility is about two orders of magnitude lower. Furthermore, TiS 3 possesses lower cleavage energy than graphite, suggesting easy exfoliation for TiS 3. Both dynamical and thermal stability of the TiS 3 monolayer is examined by phonon‐spectrum calculation and Born–Oppenheimer molecular dynamics simulation. The desired electronic properties render the TiS 3 monolayer a promising 2D atomic‐layer material for applications in future nanoelectronics.
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Special points for Brillouin-zone integrations
Monkhorst, H. J., & Pack, J. D. (1976) · Physical Review B · doi:10.1103/physrevb.13.5188 · Cited by 71,721
The electronic properties of graphene
Castro Neto, A. H., Guinea, F., Peres, N. M. R., Novoselov, K. S., & Geim, A. K. (2009) · Reviews of Modern Physics · doi:10.1103/revmodphys.81.109 · Cited by 24,803
Two-dimensional gas of massless Dirac fermions in graphene
Novoselov, K. S., Geim, A. K., Morozov, S. V., Jiang, D., Katsnelson, M. I., Grigorieva, I. V., Dubonos, S. V., & Firsov, A. A. (2005) · Nature · doi:10.1038/nature04233 · Cited by 21,611
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Experimental observation of the quantum Hall effect and Berry's phase in graphene
Zhang, Y., Tan, Y.-W., Stormer, H. L., & Kim, P. (2005) · Nature · doi:10.1038/nature04235 · Cited by 13,435
Two-dimensional atomic crystals
Novoselov, K. S., Jiang, D., Schedin, F., Booth, T. J., Khotkevich, V. V., Morozov, S. V., & Geim, A. K. (2005) · Proceedings of the National Academy of Sciences · doi:10.1073/pnas.0502848102 · Cited by 11,788
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Chhowalla, M., Shin, H. S., Eda, G., Li, L.-J., Loh, K. P., & Zhang, H. (2013) · Nature Chemistry · doi:10.1038/nchem.1589 · Cited by 10,034
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Zeng, M., Xiao, Y., Liu, J., Yang, K., & Fu, L. (2018) · Chemical Reviews · doi:10.1021/acs.chemrev.7b00633 · Cited by 574
Emerging in‐plane anisotropic two‐dimensional materials
Li, L., Han, W., Pi, L., Niu, P., Han, J., Wang, C., Su, B., Li, H., Xiong, J., Bando, Y., et al. (2019) · InfoMat · doi:10.1002/inf2.12005 · Cited by 382
Can an element form a two-dimensional nanosheet of type 15 pentagons?
Liu, L., Kankam, I., & Zhuang, H. L. (2018) · Computational Materials Science · doi:10.1016/j.commatsci.2018.07.031 · Cited by 38
Metadata
- Authors
- Dai, J., & Zeng, X. C.
- Venue
- Angewandte Chemie International Edition
- Publisher
- Wiley
- Published
- 2015-05-12
- Volume
- 54
- Issue
- 26
- Pages
- 7572-7576
- ISSN
- 1433-7851 (ISSN-L)
- 1521-3773
- OpenAlex
- W2140698097
- Cited by
- 296
- References
- 7
- FWCI
- 13.46
- Type
- journal article
- Language
- en
- Open access
- green
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- Dai, J., & Zeng, X. C. (2015). Titanium Trisulfide Monolayer: Theoretical Prediction of a New Direct‐Gap Semiconductor with High and Anisotropic Carrier Mobility. Angewandte Chemie International Edition. https://doi.org/10.1002/anie.201502107
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