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The effect of vacuum annealing on graphene
Abstract
The effect of vacuum annealing on the properties of graphene is investigated by using Raman spectroscopy and electrical measurement. Heavy hole doping on graphene with concentration as high as 1.5 × 10 13 cm−2 is observed after vacuum annealing and exposed to an air ambient. This doping is due to the H 2 O and O 2 adsorption on graphene, and graphene is believed to be more active to molecular adsorption after annealing. Such observation calls for special attention in the process of fabricating graphene‐based electronic devices and gas sensors. On the other hand, because the quality of graphene remains high after the doping process, this would be an efficient and controllable method to introduce heavy doping in graphene, which would greatly help on its application in future electronic devices. Copyright © 2009 John Wiley & Sons, Ltd.
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Cited by
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Shi, E., Li, H., Yang, L., Zhang, L., Li, Z., Li, P., Shang, Y., Wu, S., Li, X., Wei, J., et al. (2013) · Nano Letters · doi:10.1021/nl400353f · Cited by 334
Three-Dimensional Crumpled Graphene-Based Nanosheets with Ultrahigh NO 2 Gas Sensibility
Chen, Z., Wang, J., Umar, A., Wang, Y., Li, H., & Zhou, G. (2017) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.7b01229 · Cited by 120
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Metadata
- Authors
- Ni, Z. H., Wang, H. M., Luo, Z. Q., Wang, Y. Y., Yu, T., Wu, Y. H., & Shen, Z. X.
- Venue
- Journal of Raman Spectroscopy
- Publisher
- Wiley
- Published
- 2009-10-21
- Volume
- 41
- Issue
- 5
- Pages
- 479-483
- ISSN
- 0377-0486 (ISSN-L)
- 1097-4555
- OpenAlex
- W2080284466
- Cited by
- 246
- References
- 0
- FWCI
- 4.31
- Type
- journal article
- Language
- en
- Open access
- closed
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- Ni, Z. H., Wang, H. M., Luo, Z. Q., Wang, Y. Y., Yu, T., Wu, Y. H., & Shen, Z. X. (2010). The effect of vacuum annealing on graphene. Journal of Raman Spectroscopy. https://doi.org/10.1002/jrs.2485
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