Thick junction broadband organic photodiodes

Abstract

Inorganic semiconductor‐based broadband photodetectors are ubiquitous in imaging technologies such as digital cameras and photometers. Herein a broadband organic photodiode (OPD) that has performance metrics comparable or superior to inorganic photodiodes over the same spectral range is reported. The photodiode with an active layer comprised of a poly[N‐9′‐heptadecanyl‐2,7‐carbazole‐alt‐5,5‐(4′,7′‐di‐2‐thienyl‐2′,1′,3′‐benzothiadiazole)]:[6,6]‐phenyl‐C 71‐butyric acid methyl ester bulk heterojunction blend had a dark current < 1 nA/cm 2, specific detectivity of ∼10 13 Jones, reverse bias −3 dB frequency response of 100 kHz to 1 MHz, and state‐of‐the‐art Linear Dynamic Range for organic photodiodes of nine orders of magnitude (180 dB). The key to these performance metrics was the use of a thick junction (700 nm), which flattened the spectral response, reduced the dark current and decreased performance variations. The strategy also provides a route to large area defect free “monolithic” structures for low noise integrated photo‐sensing, position determination, or contact, non‐focal imaging.