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19·9%‐efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor
Open accessAbstract
We report a new record total‐area efficiency of 19·9% for CuInGaSe 2‐based thin‐film solar cells. Improved performance is due to higher fill factor. The device was made by three‐stage co‐evaporation with a modified surface termination. Growth conditions, device analysis, and basic film characterization are presented. Published in 2008 by John Wiley & Sons, Ltd.
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Cited by
Co-evaporated Cu2ZnSnSe4 films and devices
Repins, I., Beall, C., Vora, N., DeHart, C., Kuciauskas, D., Dippo, P., To, B., Mann, J., Hsu, W.-C., Goodrich, A., et al. (2012) · Solar Energy Materials and Solar Cells · doi:10.1016/j.solmat.2012.01.008 · Cited by 608
Self-citationNew-generation integrated devices based on dye-sensitized and perovskite solar cells
Yun, S., Qin, Y., Uhl, A. R., Vlachopoulos, N., Yin, M., Li, D., Han, X., & Hagfeldt, A. (2018) · Energy & Environmental Science · doi:10.1039/c7ee03165c · Cited by 478
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Habas, S. E., Platt, H. A. S., van Hest, M. F. A. M., & Ginley, D. S. (2010) · Chemical Reviews · doi:10.1021/cr100191d · Cited by 459
Cu2ZnSnS4as a potential photovoltaic material: A hybrid Hartree-Fock density functional theory study
Paier, J., Asahi, R., Nagoya, A., & Kresse, G. (2009) · Physical Review B · doi:10.1103/physrevb.79.115126 · Cited by 441
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Metadata
- Authors
- Repins, I., Contreras, M. A., Egaas, B., DeHart, C., Scharf, J., Perkins, C. L., To, B., & Noufi, R.
- Venue
- Progress in Photovoltaics: Research and Applications
- Publisher
- Wiley
- Published
- 2008-02-14
- Volume
- 16
- Issue
- 3
- Pages
- 235-239
- ISSN
- 1062-7995 (ISSN-L)
- 1099-159X
- OpenAlex
- W2136671002
- Cited by
- 2,022
- References
- 0
- FWCI
- 179.30
- Type
- journal article
- Language
- en
- Open access
- green
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- Repins, I., Contreras, M. A., Egaas, B., DeHart, C., Scharf, J., Perkins, C. L., To, B., & Noufi, R. (2008). 19·9%‐efficient ZnO/CdS/CuInGaSe2 solar cell with 81·2% fill factor. Progress in Photovoltaics: Research and Applications. https://doi.org/10.1002/pip.822
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