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The future of ZnO light emitters
Abstract
Compact, solid-state UV emitters have many potential applications, and ZnO-based materials are ideal for the wavelength range 390 nm and lower. However, the most efficient solid-state emitters are p–n junctions, and p-type ZnO is difficult to make. Thus, the future of ZnO light emitters depends on either producing low-resistivity p-type ZnO, or in mating n-type ZnO with a p-type hole injector. Perhaps the best device so far involves an n-ZnO/p-AlGaN/n-SiC structure, which produces intense 390 ± 1 nm emission at both 300 K and 500 K. However, development of p-ZnO is proceeding at a rapid pace, and a p–n homojunction should be available soon. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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Cited by
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65 years of ZnO research – old and very recent results
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Metadata
- Authors
- Look, D. C., Claflin, B., Alivov, Y. I., & Park, S. J.
- Venue
- physica status solidi (a)
- Publisher
- Wiley
- Published
- 2004-08
- Volume
- 201
- Issue
- 10
- Pages
- 2203-2212
- ISSN
- 0031-8965 (ISSN-L)
- 1521-396X
- OpenAlex
- W2030755194
- Cited by
- 476
- References
- 0
- FWCI
- 31.25
- Type
- journal article
- Language
- en
- Open access
- closed
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