The DOI matches its Crossref record; 3 of the 3 references it cites were found in a registry or an index.
Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes
Abstract
A highly flexible and transparent transistor is developed based on an exfoliated MoS 2 channel and CVD‐grown graphene source/drain electrodes. Introducing the 2D nanomaterials provides a high mechanical flexibility, optical transmittance (∼74%), and current on/off ratio (>10 4) with an average field effect mobility of ∼4.7 cm 2 V−1 s−1, all of which cannot be achieved by other transistors consisting of a MoS 2 active channel/metal electrodes or graphene channel/graphene electrodes. In particular, a low Schottky barrier (∼22 meV) forms at the MoS 2/graphene interface, which is comparable to the MoS 2/metal interface. The high stability in electronic performance of the devices upon bending up to ±2.2 mm in compressive and tensile modes, and the ability to recover electrical properties after degradation upon annealing, reveal the efficacy of using 2D materials for creating highly flexible and transparent devices.
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Cites
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N., & Strano, M. S. (2012) · Nature Nanotechnology · doi:10.1038/nnano.2012.193 · Cited by 16,374
Physics of Semiconductor Devices
Sze, S. M., & Ng, K. K. (2006) · doi:10.1002/0470068329 · Cited by 14,627
Energy gaps and a zero-field quantum Hall effect in graphene by strain engineering
Guinea, F., Katsnelson, M. I., & Geim, A. K. (2010) · Nature Physics · doi:10.1038/nphys1420 · Cited by 1,913
Cited by
Xia, J., Huang, X., Liu, L.-Z., Wang, M., Wang, L., Huang, B., Zhu, D.-D., Li, J.-J., Gu, C.-Z., & Meng, X.-M. (2014) · Nanoscale · doi:10.1039/c4nr02311k · Cited by 468
Samadi, M., Sarikhani, N., Zirak, M., Zhang, H., Zhang, H.-L., & Moshfegh, A. Z. (2018) · Nanoscale Horizons · doi:10.1039/c7nh00137a · Cited by 408
Zhang, X., Sun, D., Li, Y., Lee, G.-H., Cui, X., Chenet, D., You, Y., Heinz, T. F., & Hone, J. C. (2015) · ACS Applied Materials & Interfaces · doi:10.1021/acsami.5b08580 · Cited by 369
Zhang, C., Luo, Y., Tan, J., Yu, Q., Yang, F., Zhang, Z., Yang, L., Cheng, H.-M., & Liu, B. (2020) · Nature Communications · doi:10.1038/s41467-020-17121-8 · Cited by 266
Metadata
- Authors
- Yoon, J., Park, W., Bae, G., Kim, Y., Jang, H. S., Hyun, Y., Lim, S. K., Kahng, Y. H., Hong, W., Lee, B. H., & Ko, H. C.
- Venue
- Small
- Publisher
- Wiley
- Published
- 2013-02-18
- Volume
- 9
- Issue
- 19
- Pages
- 3295-3300
- ISSN
- 1613-6810 (ISSN-L)
- 1613-6829
- OpenAlex
- W2114580729
- Cited by
- 275
- References
- 3
- FWCI
- 16.13
- Type
- journal article
- Language
- en
- Open access
- closed
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- Yoon, J., Park, W., Bae, G., Kim, Y., Jang, H. S., Hyun, Y., Lim, S. K., Kahng, Y. H., Hong, W., Lee, B. H., & Ko, H. C. (2013). Highly Flexible and Transparent Multilayer MoS2 Transistors with Graphene Electrodes. Small. https://doi.org/10.1002/smll.201300134
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