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Cited by 238

The DOI matches its Crossref record; 1 of the 1 references it cites were found in a registry or an index.

Fabrication of Ultrathin Bi2S3 Nanosheets for High‐Performance, Flexible, Visible–NIR Photodetectors

Chen, Guihuan, Yu, Yongqiang, Zheng, Kun, Ding, Tao, Wang, Wenliang, Jiang, Yang, Yang, Qing·2015·Small

Abstract

Ultrathin Bi2 S3 nanosheets with thicknesses down to 2.2 nm are fabricated. The resultant ultrathin Bi2 S3 -based photoconductor shows high sensitivity to visible-near infrared light from 405 to 780 nm with a high external photoresponsivity up to 4.4 A W(-1) , high detectivity of ≈10(11) Jones, relatively fast response time of ≈10 μs, and high flexibility and durability.

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Crossref · 10.1002/smll.201403508

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Metadata

Authors
Chen, G., Yu, Y., Zheng, K., Ding, T., Wang, W., Jiang, Y., & Yang, Q.
Venue
Small
Publisher
Wiley
Published
2015-02-19
Volume
11
Issue
24
Pages
2848-2855
ISSN
  • 1613-6810 (ISSN-L)
  • 1613-6829
OpenAlex
W2106062375
Cited by
238
References
1
FWCI
10.13
Type
journal article
Language
en
Open access
closed

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CoChat. (2026). Citation check: Fabrication of Ultrathin Bi2S3 Nanosheets for High‐Performance, Flexible, Visible–NIR Photodetectors. https://app.cochat.ai/papers/10.1002/smll.201403508
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Chen, G., Yu, Y., Zheng, K., Ding, T., Wang, W., Jiang, Y., & Yang, Q. (2015). Fabrication of Ultrathin Bi2S3 Nanosheets for High‐Performance, Flexible, Visible–NIR Photodetectors. Small. https://doi.org/10.1002/smll.201403508

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