The DOI matches its Crossref record; 24 of the 25 references it cites were found in a registry or an index.
Solid-State Memcapacitors and Their Applications
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“Previously we pointed out that ferroelectric capacitors are a kind of memcapacitors [2], and there is no doubt about such classification [15].”
From Comment on 'If it's pinched it's a memristor' (2019) · cites this paper as [15]
Citations
Cites
Strukov, D. B., Snider, G. S., Stewart, D. R., & Williams, R. S. (2008) · Nature · doi:10.1038/nature06932 · Cited by 11,828
Memristor—The Missing Circuit Element
Chua, L. (1971) · IEEE Transactions on Circuit Theory · doi:10.1109/tct.1971.1083337 · Cited by 10,268
Resistive switching in transition metal oxides
Sawa, A. (2008) · Materials Today · doi:10.1016/s1369-7021(08)70119-6 · Cited by 2,949
Ferroelectric thin films: Review of materials, properties, and applications
Setter, N., Damjanović, D., Eng, L. M., Fox, G. R., Gevorgian, S., Hong, S., Kingon, A. I., Kohlstedt, H., Park, N. Y., Stephenson, G. B., et al. (2006) · Journal of Applied Physics · doi:10.1063/1.2336999 · Cited by 1,915
Resistance switching memories are memristors
Chua, L. (2011) · Applied Physics A · doi:10.1007/s00339-011-6264-9 · Cited by 1,434
Circuit Elements With Memory: Memristors, Memcapacitors, and Meminductors
Di Ventra, M., Pershin, Y. V., & Chua, L. O. (2009) · Proceedings of the IEEE · doi:10.1109/jproc.2009.2021077 · Cited by 1,212
(2012) · Wiley-VCH eBooks · Cited by 652
Adaptive oxide electronics: A review
Ha, S. D., & Ramanathan, S. (2011) · Journal of Applied Physics · doi:10.1063/1.3640806 · Cited by 308
Nonlinear circuit foundations for nanodevices, part I: the four-element torus
Chua, L. O. (2003) · Proceedings of the IEEE · doi:10.1109/jproc.2003.818319 · Cited by 263
Ferroelectric Random Access Memories
Ishiwara, H. (2012) · Journal of Nanoscience and Nanotechnology · doi:10.1166/jnn.2012.6651 · Cited by 230
Research works printed but not linked: 2
- Chua, L.O.: In: Invited Speech at the Memristor and Memristive Systems Symposium, Berkeley, CA (2008)
- Martinez, J., Di Ventra, M., Pershin, Y.V.: Solid-state memcapacitor, pp. 1–7 (2009). arXiv:0912.4921v2 [cond-mat.mes-hall] · arXiv
Cited by
Sorted by citations
Analog Emulator of Genuinely Floating Memcapacitor with Piecewise-Linear Constitutive Relation
Biolek, D., Biolková, V., Kolka, Z., & Dobes, J. (2015) · Circuits, systems, and signal processing · doi:10.1007/s00034-015-0067-8
Memcapacitors in neuromorphic architectures: the mechanisms, challenges, and applications
Chen, K., Shih, L., Chen, Y.-C., Lin, K., & Chen, J. (2025) · Journal of Materials Chemistry C · doi:10.1039/d5tc00993f · Cited by 11
Comment on 'If it's pinched it's a memristor'
Pershin, Y. V., & Ventra, M. D. (2019) · Semiconductor Science and Technology · doi:10.1088/1361-6641/ab3584 · Cited by 10
“ferroelectric capacitors are a kind of memcapacitors [2], and there is no doubt about such classification [15].”
Setoudeh, F., & Sedigh, A. K. (2021) · Chaos Solitons & Fractals · doi:10.1016/j.chaos.2021.111214 · Cited by 10
Solid-state memcapacitive device based on memristive switch
Flak, J., Lehtonen, E., Laiho, M., Rantala, A., Prunnila, M., & Haatainen, T. (2014) · Semiconductor Science and Technology · doi:10.1088/0268-1242/29/10/104012 · Cited by 9
Self-citationMemcapacitor: Modeling, Analysis, and Emulators
Radwan, A. G., & Fouda, M. E. (2015) · Studies in systems, decision and control · doi:10.1007/978-3-319-17491-4_6 · Cited by 7
Abbasi, A., Setoudeh, F., Tavakoli, M. B., & Horri, A. (2021) · Semiconductor Science and Technology · doi:10.1088/1361-6641/abf7d4 · Cited by 5
“In [43], a detailed description of the theoretical analysis, simulations, and modeling of this structure is presented.”
BackgroundInfluentialA novel design of high performance and robust ultra-low power SRAM cell based on memcapacitor
Abbasi, A., Setoudeh, F., Tavakoli, M. B., & Horri, A. (2021) · Nanotechnology · doi:10.1088/1361-6528/ac46d6 · Cited by 3
“A voltage-controlled memcapacitor can be modelled as follows [56]:”
BackgroundSemi-Empirical $RC$ Circuit Model for Non-Filamentary Bi-Layer OxRAM Devices
Majumdar, S., Chen, Y., Hudec, B., Hou, T., & Suri, M. (2020) · IEEE Transactions on Electron Devices · doi:10.1109/ted.2020.2964113 · Cited by 2
“Additionally, as opposed to filamentary devices that typically show high ohmic conductivity in the low resistance state (LRS), the non-filamentary analog devices remain capacitive in the whole resistivity range as the barrier dielectric remains intact [10].”
BackgroundStored Energy and the Charging Energy Efficiency in a Memcapacitor Circuit
Tulumbaci, F., Yener, Ş. Ç., & MUTLU, R. (2020) · Proceedings of the World Congress on Electrical Engineering and Computer Systems and Science · doi:10.11159/eee20.105 · Cited by 2
Intermediate Resistance and Capacitance States in Ge‐Rich GeSbTe Phase‐Change Memory
Delpoux, A., Ran, S., Pecourt, L., Simola, R., Benoit, D., Jeannot, S., Claverie, A., & Grisolia, J. (2026) · physica status solidi (RRL) - Rapid Research Letters · doi:10.1002/pssr.202500422 · Cited by 1
A Two-capacitor Problem with a Memcapacitor and a Conformal Fractional-Order Capacitor Put Together
PALAZ, U., & MUTLU, R. (2022) · European Journal of Engineering and Applied Sciences · doi:10.55581/ejeas.1115102 · Cited by 1
Implementation of a memristor-based solid-state memcapacitive device
Flak, J., Raantala, A., Haatainen, T., Prunnila, M., & Laiho, M. (2014) · International Workshop on Cellular Nanoscale Networks and their Applications (CNNA) · doi:10.1109/cnna.2014.6888633
Self-citationMemcapacitor Based Applications
Radwan, A. G., & Fouda, M. E. (2015) · Studies in systems, decision and control · doi:10.1007/978-3-319-17491-4_7
Metadata
- Authors
- Flak, J., & Poikonen, J. K.
- Affiliations
- VTT Technical Research Centre of Finland (FI)
- University of Turku (FI)
- Corresponding author
- Flak, Jacek
- Venue
- Memristor Networks
- Publisher
- Springer International Publishing
- Published
- 2014
- Pages
- 585-601
- OpenAlex
- W48784079
- Cited by
- 14
- References
- 25
- Citations by year
- 2026: 1 · 2025: 1 · 2022: 1 · 2021: 3 · 2020: 2 · 2019: 1 · 2015: 3 · 2014: 2
- FWCI
- 6.13
- Type
- book chapter
- Language
- en
- Open access
- closed
- Licence
- Locations
- Springer eBooks (publishedVersion)
- Topics
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Advanced Memory and Neural Computing
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Ferroelectric and Negative Capacitance Devices
- Physical Sciences › Engineering › Electrical and Electronic Engineering › Semiconductor materials and devices
- Keywords
- memcapacitor, ferroelectric capacitors, metal-insulator-metal capacitors, memristors, memristive switching, artificial neural networks, neuromorphic memory, applications of logic, circuit integration
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