Advances in MoS2-Based Field Effect Transistors (FETs)

Abstract

This paper reviews the original achievements and advances regarding the field effect transistor (FET) fabricated from one of the most studied transition metal dichalcogenides: two-dimensional MoS 2 . Not like graphene, which is highlighted by a gapless Dirac cone band structure, Monolayer MoS 2 is featured with a 1.9 eV gapped direct energy band thus facilitates convenient electronic and/or optoelectronic modulation of its physical properties in FET structure. Indeed, many MoS 2 devices based on FET architecture such as phototransistors, memory devices, and sensors have been studied and extraordinary properties such as excellent mobility, ON/OFF ratio, and sensitivity of these devices have been exhibited. However, further developments in FET device applications depend a lot on if novel physics would be involved in them. In this review, an overview on advances and developments in the MoS 2 -based FETs are presented. Engineering of MoS 2 -based FETs will be discussed in details for understanding contact physics, formation of gate dielectric, and doping strategies. Also reported are demonstrations of device behaviors such as low-frequency noise and photoresponse in MoS 2 -based FETs, which is crucial for developing electronic and optoelectronic devices.